Optical constants of cubic gan/gaas(001): experiment and modeling
文献类型：期刊论文
| 作者 | Munoz, M; Huang, YS; Pollak, FH; Yang, H |
| 刊名 | Journal of applied physics
 |
| 出版日期 | 2003-03-01 |
| 卷号 | 93期号:5页码:2549-2553 |
| ISSN号 | 0021-8979 |
| DOI | 10.1063/1.1540725 |
| 通讯作者 | Munoz, m() |
| 英文摘要 | The optical constants epsilon(e)=epsilon(1)(e)+iepsilon(2)(e) of unintentionally doped cubic gan grown on gaas(001) have been measured at 300 k using spectral ellipsometry in the range of 1.5-5.0 ev. the epsilon(e) spectra display a structure, associated with the critical point at e-0 (direct gap) and some contribution mainly coming from the e-1 critical point. the experimental data over the entire measured spectral range (after oxide removal) has been fit using the holden-munoz model dielectric function [m. munoz et al., j. appl. phys. 92, 5878 (2002)]. this model is based on the electronic energy-band structure near critical points plus excitonic and band-to-band coulomb-enhancement effects at e-0, e-0 + delta(0) and the e-1, e-1 + delta(1), doublet. in addition to evaluating the energy of the e-0 critical point, the binding energy (r-1) of the two-dimensional exciton related to the e-1 critical point was estimated using the effective mass/k.p theory. the line, shape of the imaginary part of the cubic-gan dielectric function shows excitonic effects at room temperature not withstanding that the exciton was not resolved. (c) 2003 american institute of physics. |
| WOS关键词 | MOLECULAR-BEAM EPITAXY ; HEXAGONAL GAN ; TEMPERATURE ; SEMICONDUCTORS ; TRANSITIONS ; GROWTH ; GAIN ; ALN ; ELLIPSOMETRY ; WURTZITE |
| WOS研究方向 | Physics |
| WOS类目 | Physics, Applied |
| 语种 | 英语 |
| WOS记录号 | WOS:000181307000035 |
| 出版者 | AMER INST PHYSICS |
| URI标识 | http://www.irgrid.ac.cn/handle/1471x/2429250 |
| 专题 | 半导体研究所 |
| 通讯作者 | Munoz, M |
| 作者单位 | 1.CUNY Brooklyn Coll, Dept Phys, Brooklyn, NY 11210 USA 2.CUNY Brooklyn Coll, New York Ctr Adv Technol Ultrafast Photon Mat & A, Brooklyn, NY 11210 USA 3.Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, Beijing 100083, Peoples R China 4.Chinese Acad Sci, Inst Semicond, Natl Res Ctr Optoelect Technol, Beijing 100083, Peoples R China 5.Natl Taiwan Univ Sci & Technol, Dept Elect Engn, Taipei 106, Taiwan 6.CUNY Grad Sch & Univ Ctr, New York, NY 10036 USA |
| 推荐引用方式 GB/T 7714 | Munoz, M,Huang, YS,Pollak, FH,et al. Optical constants of cubic gan/gaas(001): experiment and modeling[J]. Journal of applied physics,2003,93(5):2549-2553. |
| APA | Munoz, M,Huang, YS,Pollak, FH,&Yang, H.(2003).Optical constants of cubic gan/gaas(001): experiment and modeling.Journal of applied physics,93(5),2549-2553. |
| MLA | Munoz, M,et al."Optical constants of cubic gan/gaas(001): experiment and modeling".Journal of applied physics 93.5(2003):2549-2553. |
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来源：半导体研究所
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