Growth temperature effect on the optical and material properties of alxinyga1-x-yn epilayers grown by mocvd
文献类型：期刊论文
| 作者 | Huang, JS; Dong, X; Luo, XD; Li, DB; Liu, XL; Xu, ZY; Ge, WK |
| 刊名 | Journal of crystal growth
 |
| 出版日期 | 2003 |
| 卷号 | 247期号:1-2页码:84-90 |
| 关键词 | Surfaces X-ray diffraction Growth from high temperature solutions Metalorganic chemical vapor deposition Nitrides Semiconducting iii-v materials |
| ISSN号 | 0022-0248 |
| 通讯作者 | Huang, js(hjs@red.semi.ac.cn) |
| 英文摘要 | Alxinyga1-x-yn epilayers have been grown by metalorganic chemical vapor deposition (mocvd) at different temperatures from 800 to 870degreesc. the incorporation of indium is found to increase with decreasing growth temperature, while the incorporation of al remains nearly constant. the optical properties of the samples have been investigated by photoluminescence (pl) and time-resolved photoluminescence (trpl) at different temperatures. the results show that the sample grown at 820 c exhibits the best optical quality for its large pl intensity and the absence of the yellow luminescence. furthermore the temperature-dependent pl and trpl of the sample reveals its less exciton localization effect caused by alloy fluctuations. in the scanning electron microscopy measurement, much uniform surface morphology is found for the sample grown at 820degreesc, in good agreement with the pl results, the improvement of alxinyga1-x-yn quality is well correlated with the incorporation of indium into algan and the possible mechanism is discussed. (c) 2002 elsevier science b.v. all rights reserved. |
| WOS关键词 | TIME-RESOLVED PHOTOLUMINESCENCE ; MULTIPLE-QUANTUM WELLS ; LUMINESCENCE ; ALLOYS ; DIODES ; GAN ; AL |
| WOS研究方向 | Crystallography ; Materials Science ; Physics |
| WOS类目 | Crystallography ; Materials Science, Multidisciplinary ; Physics, Applied |
| 语种 | 英语 |
| WOS记录号 | WOS:000180078300013 |
| 出版者 | ELSEVIER SCIENCE BV |
| URI标识 | http://www.irgrid.ac.cn/handle/1471x/2429251 |
| 专题 | 半导体研究所 |
| 通讯作者 | Huang, JS |
| 作者单位 | 1.Chinese Acad Sci, Inst Semicond, Beijing 100083, Peoples R China 2.Hong Kong Univ Sci & Technol, Dept Phys, Hong Kong, Hong Kong, Peoples R China |
| 推荐引用方式 GB/T 7714 | Huang, JS,Dong, X,Luo, XD,et al. Growth temperature effect on the optical and material properties of alxinyga1-x-yn epilayers grown by mocvd[J]. Journal of crystal growth,2003,247(1-2):84-90. |
| APA | Huang, JS.,Dong, X.,Luo, XD.,Li, DB.,Liu, XL.,...&Ge, WK.(2003).Growth temperature effect on the optical and material properties of alxinyga1-x-yn epilayers grown by mocvd.Journal of crystal growth,247(1-2),84-90. |
| MLA | Huang, JS,et al."Growth temperature effect on the optical and material properties of alxinyga1-x-yn epilayers grown by mocvd".Journal of crystal growth 247.1-2(2003):84-90. |
入库方式： iSwitch采集
来源：半导体研究所
浏览0
下载0
收藏0
其他版本
除非特别说明，本系统中所有内容都受版权保护，并保留所有权利。