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Growth temperature effect on the optical and material properties of alxinyga1-x-yn epilayers grown by mocvd

文献类型:期刊论文

作者Huang, JS; Dong, X; Luo, XD; Li, DB; Liu, XL; Xu, ZY; Ge, WK
刊名Journal of crystal growth
出版日期2003
卷号247期号:1-2页码:84-90
关键词Surfaces X-ray diffraction Growth from high temperature solutions Metalorganic chemical vapor deposition Nitrides Semiconducting iii-v materials
ISSN号0022-0248
通讯作者Huang, js(hjs@red.semi.ac.cn)
英文摘要Alxinyga1-x-yn epilayers have been grown by metalorganic chemical vapor deposition (mocvd) at different temperatures from 800 to 870degreesc. the incorporation of indium is found to increase with decreasing growth temperature, while the incorporation of al remains nearly constant. the optical properties of the samples have been investigated by photoluminescence (pl) and time-resolved photoluminescence (trpl) at different temperatures. the results show that the sample grown at 820 c exhibits the best optical quality for its large pl intensity and the absence of the yellow luminescence. furthermore the temperature-dependent pl and trpl of the sample reveals its less exciton localization effect caused by alloy fluctuations. in the scanning electron microscopy measurement, much uniform surface morphology is found for the sample grown at 820degreesc, in good agreement with the pl results, the improvement of alxinyga1-x-yn quality is well correlated with the incorporation of indium into algan and the possible mechanism is discussed. (c) 2002 elsevier science b.v. all rights reserved.
WOS关键词TIME-RESOLVED PHOTOLUMINESCENCE ; MULTIPLE-QUANTUM WELLS ; LUMINESCENCE ; ALLOYS ; DIODES ; GAN ; AL
WOS研究方向Crystallography ; Materials Science ; Physics
WOS类目Crystallography ; Materials Science, Multidisciplinary ; Physics, Applied
语种英语
WOS记录号WOS:000180078300013
出版者ELSEVIER SCIENCE BV
URI标识http://www.irgrid.ac.cn/handle/1471x/2429251
专题半导体研究所
通讯作者Huang, JS
作者单位1.Chinese Acad Sci, Inst Semicond, Beijing 100083, Peoples R China
2.Hong Kong Univ Sci & Technol, Dept Phys, Hong Kong, Hong Kong, Peoples R China
推荐引用方式
GB/T 7714
Huang, JS,Dong, X,Luo, XD,et al. Growth temperature effect on the optical and material properties of alxinyga1-x-yn epilayers grown by mocvd[J]. Journal of crystal growth,2003,247(1-2):84-90.
APA Huang, JS.,Dong, X.,Luo, XD.,Li, DB.,Liu, XL.,...&Ge, WK.(2003).Growth temperature effect on the optical and material properties of alxinyga1-x-yn epilayers grown by mocvd.Journal of crystal growth,247(1-2),84-90.
MLA Huang, JS,et al."Growth temperature effect on the optical and material properties of alxinyga1-x-yn epilayers grown by mocvd".Journal of crystal growth 247.1-2(2003):84-90.

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来源:半导体研究所

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