Structual and optoelectronic properties of polycrystalline silicon thin films prepared by hot-wire chemical vapor deposition at low temperatures
文献类型：期刊论文
| 作者 | Wang, LJ; Zhu, MF; Liu, FZ; Liu, JL; Han, YQ |
| 刊名 | Acta physica sinica
 |
| 出版日期 | 2003-11-01 |
| 卷号 | 52期号:11页码:2934-2938 |
| 关键词 | Polycrystalline silicon Hot-wire cvd Optoelectronic properties |
| ISSN号 | 1000-3290 |
| 通讯作者 | Wang, lj() |
| 英文摘要 | Polycrystalline silicon thin films were prepared by hot-wire chemical vapor deposition ( hwcvd) on glass at 250 degreesc with w or ta wire as the catalyzers. the structual and optoelectronic properties as functions of the filament temperature, deposition pressure and the filament-substrate distance were studied, and the optimized polycrystalline silicon thin films were obtained with x-c > 90 % ( x-c denotes the crystalline ratio of the film), crystal grain size about 30-40nm, r-d approximate to 0.8nm/s, sigma(d) about 10(-7) - 10(-6) omega(-1) cm(-1), ea(a) approximate to 0.5ev and e-opt less than or equal to 1.3ev. |
| WOS关键词 | AMORPHOUS-SILICON |
| WOS研究方向 | Physics |
| WOS类目 | Physics, Multidisciplinary |
| 语种 | 英语 |
| WOS记录号 | WOS:000186520100050 |
| 出版者 | CHINESE PHYSICAL SOC |
| URI标识 | http://www.irgrid.ac.cn/handle/1471x/2429252 |
| 专题 | 半导体研究所 |
| 通讯作者 | Wang, LJ |
| 作者单位 | 1.Chinese Acad Sci, Dept Phys, Grad Sch, Beijing 100039, Peoples R China 2.Chinese Acad Sci, Inst Semicond, Beijing 100083, Peoples R China |
| 推荐引用方式 GB/T 7714 | Wang, LJ,Zhu, MF,Liu, FZ,et al. Structual and optoelectronic properties of polycrystalline silicon thin films prepared by hot-wire chemical vapor deposition at low temperatures[J]. Acta physica sinica,2003,52(11):2934-2938. |
| APA | Wang, LJ,Zhu, MF,Liu, FZ,Liu, JL,&Han, YQ.(2003).Structual and optoelectronic properties of polycrystalline silicon thin films prepared by hot-wire chemical vapor deposition at low temperatures.Acta physica sinica,52(11),2934-2938. |
| MLA | Wang, LJ,et al."Structual and optoelectronic properties of polycrystalline silicon thin films prepared by hot-wire chemical vapor deposition at low temperatures".Acta physica sinica 52.11(2003):2934-2938. |
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来源：半导体研究所
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