Design of high brightness cubic-gan leds grown on gaas substrate
文献类型：期刊论文
| 作者 | Sun, YP; Shen, XM; Zhang, ZH; Zhao, DG; Feng, ZH; Fu, Y; Zhang, SN; Yang, H |
| 刊名 | Journal of the korean physical society
 |
| 出版日期 | 2003-02-01 |
| 卷号 | 42页码:S753-s756 |
| ISSN号 | 0374-4884 |
| 关键词 | Wafer bunding Cubic gan |
| 通讯作者 | Sun, yp() |
| 英文摘要 | The principle of optical thin film was used to calculate the feasibility of improving the light extraction efficiency of gan/gaas optical devices by wafer-bonding technique. the calculated results show that the light extraction efficiency of bonded samples can be improved by 2.66 times than the as-grown gan/gaas samples when a thin ni layer was used as adhesive layer and ag layer as reflective layer. full reflectance spectrum comparison shows that reflectivity for the incident light of 459.2 nm of the bonded samples was improved by 2.4 times than the as-grown samples, which is consistent with the calculated results. |
| WOS关键词 | LIGHT-EMITTING-DIODES ; FIELD-EFFECT TRANSISTOR ; SINGLE-CRYSTAL GAN ; MICROWAVE PERFORMANCE ; MIRROR ; JUNCTION |
| WOS研究方向 | Physics |
| WOS类目 | Physics, Multidisciplinary |
| 语种 | 英语 |
| 出版者 | KOREAN PHYSICAL SOC |
| WOS记录号 | WOS:000181337500148 |
| URI标识 | http://www.irgrid.ac.cn/handle/1471x/2429258 |
| 专题 | 半导体研究所 |
| 通讯作者 | Sun, YP |
| 作者单位 | Chinese Acad Sci, State Key Lab Integrated Optoelect, Inst Semicond, Beijing 100083, Peoples R China |
| 推荐引用方式 GB/T 7714 | Sun, YP,Shen, XM,Zhang, ZH,et al. Design of high brightness cubic-gan leds grown on gaas substrate[J]. Journal of the korean physical society,2003,42:S753-s756. |
| APA | Sun, YP.,Shen, XM.,Zhang, ZH.,Zhao, DG.,Feng, ZH.,...&Yang, H.(2003).Design of high brightness cubic-gan leds grown on gaas substrate.Journal of the korean physical society,42,S753-s756. |
| MLA | Sun, YP,et al."Design of high brightness cubic-gan leds grown on gaas substrate".Journal of the korean physical society 42(2003):S753-s756. |
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来源：半导体研究所
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