Effect of different type intermediate layers on band structure and gain of ga1-xinxnyas1-y-gaas quantum well lasers
文献类型：期刊论文
| 作者 | Zhang, W; Xu, YQ; Wu, RH |
| 刊名 | Ieee photonics technology letters
 |
| 出版日期 | 2003-10-01 |
| 卷号 | 15期号:10页码:1336-1338 |
| 关键词 | Band structure Differential gain Gainnas Optical gain Strain compensated Strain mediated |
| ISSN号 | 1041-1135 |
| DOI | 10.1109/lpt.2003.818264 |
| 通讯作者 | Zhang, w() |
| 英文摘要 | Based on the band-anticrossing model, the effect of the strain-compensated layer and the strain-mediated layer on the band structure, the gain, and the differential gain of gainnas-gaas quantum well lasers have been investigated. different band-filling mechanisms have been illustrated. compared to the gainnas-gaas single quantum well with the same wavelength,, the introduction. (if the strain-compensated layer and the strain-mediated layer increases the transparency carrier density. however, these multilayer structures help to suppress the degradation of the differential gain. |
| WOS关键词 | STRAIN ; TEMPERATURE ; DIODES ; ALLOYS ; OFFSET |
| WOS研究方向 | Engineering ; Optics ; Physics |
| WOS类目 | Engineering, Electrical & Electronic ; Optics ; Physics, Applied |
| 语种 | 英语 |
| WOS记录号 | WOS:000185519400004 |
| 出版者 | IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC |
| URI标识 | http://www.irgrid.ac.cn/handle/1471x/2429261 |
| 专题 | 半导体研究所 |
| 通讯作者 | Zhang, W |
| 作者单位 | Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, Beijing 100083, Peoples R China |
| 推荐引用方式 GB/T 7714 | Zhang, W,Xu, YQ,Wu, RH. Effect of different type intermediate layers on band structure and gain of ga1-xinxnyas1-y-gaas quantum well lasers[J]. Ieee photonics technology letters,2003,15(10):1336-1338. |
| APA | Zhang, W,Xu, YQ,&Wu, RH.(2003).Effect of different type intermediate layers on band structure and gain of ga1-xinxnyas1-y-gaas quantum well lasers.Ieee photonics technology letters,15(10),1336-1338. |
| MLA | Zhang, W,et al."Effect of different type intermediate layers on band structure and gain of ga1-xinxnyas1-y-gaas quantum well lasers".Ieee photonics technology letters 15.10(2003):1336-1338. |
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来源：半导体研究所
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