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Alloy states in dilute gaas1-xnx alloys (x < 1%)

文献类型:期刊论文

作者Luo, XD; Huang, JS; Xu, ZY; Yang, CL; Liu, J; Ge, WK; Zhang, Y; Mascarenhas, A; Xin, HP; Tu, CW
刊名Applied physics letters
出版日期2003-03-17
卷号82期号:11页码:1697-1699
ISSN号0003-6951
DOI10.1063/1.1560872
通讯作者Luo, xd()
英文摘要A set of gaas1-xnx samples with small nitrogen composition (x<1%) were investigated by continuous-wave photoluminescence (pl), pulse-wave excitation pl, and time-resolved pl. in the pl spectra, an extra transition located at the higher-energy side of the commonly reported n-related emissions was observed. by measuring the pl dependence on temperature and excitation power, the pl peak was identified as a transition of alloy band edge-related recombination in gaasn. the pl dynamics further confirms its intrinsic nature as being associated with the band edge rather than n-related bound states. (c) 2003 american institute of physics.
WOS关键词BAND-GAP REDUCTION ; GAASN ; EXCITONS
WOS研究方向Physics
WOS类目Physics, Applied
语种英语
WOS记录号WOS:000181442300017
出版者AMER INST PHYSICS
URI标识http://www.irgrid.ac.cn/handle/1471x/2429262
专题半导体研究所
通讯作者Luo, XD
作者单位1.Chinese Acad Sci, Inst Semicond, Natl Lab Superlattices Microstruct, Beijing 100083, Peoples R China
2.Hong Kong Univ Sci & Technol, Dept Phys, Hong Kong, Hong Kong, Peoples R China
3.Natl Renewable Energy Lab, Golden, CO 80401 USA
4.Univ Calif San Diego, Dept Elect & Comp Engn, La Jolla, CA 92093 USA
推荐引用方式
GB/T 7714
Luo, XD,Huang, JS,Xu, ZY,et al. Alloy states in dilute gaas1-xnx alloys (x < 1%)[J]. Applied physics letters,2003,82(11):1697-1699.
APA Luo, XD.,Huang, JS.,Xu, ZY.,Yang, CL.,Liu, J.,...&Tu, CW.(2003).Alloy states in dilute gaas1-xnx alloys (x < 1%).Applied physics letters,82(11),1697-1699.
MLA Luo, XD,et al."Alloy states in dilute gaas1-xnx alloys (x < 1%)".Applied physics letters 82.11(2003):1697-1699.

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来源:半导体研究所

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