Formation of high quality gallium nitride thin films on ga-diffused si(111) substrate
文献类型：期刊论文
| 作者 | Xue, CS; Yang, L; Wang, CM; Zhuang, HZ; Wei, QQ |
| 刊名 | Applied surface science
 |
| 出版日期 | 2003-04-15 |
| 卷号 | 210期号:3-4页码:153-157 |
| 关键词 | Ga2o3 Gan R.f. magnetron sputtering Ammoniating |
| ISSN号 | 0169-4332 |
| DOI | 10.1016/s0169-4332(03)00154-5 |
| 通讯作者 | Yang, l() |
| 英文摘要 | High quality gallium nitride thin films have been successfully grown on the ga-diffused si(111) substrates through ammoniating ga2o3 thin films deposited by r.f. magnetron sputtering. x-ray diffraction (xrd), x-ray photoelectron spectroscopy (xps), transmission electron microscopy (tem), atomic force microscope (afm) and photoluminescence (pl) were used to characterize the synthesized samples. the analyses reveal that the formed films are high quality polycrystalline hexagonal gallium nitride. the as-formed gan films show a flat surface topography with rms roughness varied from 29 to 48 a. the strong near-band-edge-emission peak around 368 nm was observed at room temperature. this is a novel method to fabricate gan thin films based on the direct reaction between ga2o3 and nh3 on the ga-diffused si(111) substrates. (c) 2003 elsevier science b.v. all rights reserved. |
| WOS关键词 | MOLECULAR-BEAM EPITAXY ; CUBIC GAN ; GROWTH ; LAYERS ; SI(001) |
| WOS研究方向 | Chemistry ; Materials Science ; Physics |
| WOS类目 | Chemistry, Physical ; Materials Science, Coatings & Films ; Physics, Applied ; Physics, Condensed Matter |
| 语种 | 英语 |
| WOS记录号 | WOS:000182301400001 |
| 出版者 | ELSEVIER SCIENCE BV |
| URI标识 | http://www.irgrid.ac.cn/handle/1471x/2429264 |
| 专题 | 半导体研究所 |
| 通讯作者 | Yang, L |
| 作者单位 | 1.Shandong Normal Univ, Inst Semicond, Chem Funct Mat Lab, Jinan 250014, Peoples R China 2.Shandong Normal Univ, Dept Phys, Jinan 250014, Peoples R China |
| 推荐引用方式 GB/T 7714 | Xue, CS,Yang, L,Wang, CM,et al. Formation of high quality gallium nitride thin films on ga-diffused si(111) substrate[J]. Applied surface science,2003,210(3-4):153-157. |
| APA | Xue, CS,Yang, L,Wang, CM,Zhuang, HZ,&Wei, QQ.(2003).Formation of high quality gallium nitride thin films on ga-diffused si(111) substrate.Applied surface science,210(3-4),153-157. |
| MLA | Xue, CS,et al."Formation of high quality gallium nitride thin films on ga-diffused si(111) substrate".Applied surface science 210.3-4(2003):153-157. |
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来源：半导体研究所
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