Photoluminescence of mg-doped gan grown by metalorganic chemical vapor deposition
文献类型：期刊论文
| 作者 | Qu, BZ; Zhu, QS; Sun, XH; Wan, SK; Wang, ZG; Nagai, H; Kawaguchi, Y; Hiramatsu, K; Sawaki, N |
| 刊名 | Journal of vacuum science & technology a
 |
| 出版日期 | 2003-07-01 |
| 卷号 | 21期号:4页码:838-841 |
| ISSN号 | 0734-2101 |
| DOI | 10.1116/1.1575214 |
| 通讯作者 | Qu, bz() |
| 英文摘要 | Two mg-doped gan films with different doping concentrations were grown by a metalorganic chemical vapor deposition technique. photoluminescence (pl) experiments were carried out to investigate the optical properties of these films. for highly mg-doped gan, the pl spectra at 10 k are composed of a blue luminescence (bl) band at 2.857 ev and two excitonic luminescence lines at 3.342 ev and 3.282 ev, in addition to a l2 phonon replica at 3.212 ev. the intensity of the l1 line decreases monotonously with an increase,in temperature. however, the intensity of the l2 line first slowly increases at first, and then decreases quickly with an increase in temperature. the two lines are attributed to bound excitonic emissions at extended defects. the bl band is most likely due to the transition from deep donor mg-v-n complex to mg shallow acceptor. from the temperature dependence of the luminescence peak intensity of the bl band, the activation energy of acceptor mg was found to be 290 mev. (c) 2003 american vacuum society. |
| WOS关键词 | P-TYPE GAN ; LIGHT-EMITTING-DIODES ; LOCALIZED EXCITONS ; GALLIUM NITRIDE ; FILMS ; DEFECTS ; LUMINESCENCE ; COMPENSATION ; SPECTROSCOPY ; ACCEPTORS |
| WOS研究方向 | Materials Science ; Physics |
| WOS类目 | Materials Science, Coatings & Films ; Physics, Applied |
| 语种 | 英语 |
| WOS记录号 | WOS:000184409200003 |
| 出版者 | A V S AMER INST PHYSICS |
| URI标识 | http://www.irgrid.ac.cn/handle/1471x/2429268 |
| 专题 | 半导体研究所 |
| 通讯作者 | Qu, BZ |
| 作者单位 | 1.Chinese Acad Sci, Inst Semicond, Lab Semicond Mat Sci, Beijing 100083, Peoples R China 2.Nagoya Univ, Dept Elect, Chikusa Ku, Nagoya, Aichi 464, Japan 3.Mie Univ, Dept Elect Engn & Elect, Tsu, Mie 5148603, Japan |
| 推荐引用方式 GB/T 7714 | Qu, BZ,Zhu, QS,Sun, XH,et al. Photoluminescence of mg-doped gan grown by metalorganic chemical vapor deposition[J]. Journal of vacuum science & technology a,2003,21(4):838-841. |
| APA | Qu, BZ.,Zhu, QS.,Sun, XH.,Wan, SK.,Wang, ZG.,...&Sawaki, N.(2003).Photoluminescence of mg-doped gan grown by metalorganic chemical vapor deposition.Journal of vacuum science & technology a,21(4),838-841. |
| MLA | Qu, BZ,et al."Photoluminescence of mg-doped gan grown by metalorganic chemical vapor deposition".Journal of vacuum science & technology a 21.4(2003):838-841. |
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来源：半导体研究所
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