Improving response speed of electrooptical switch in silicon-on-insulator by modifying modulation area structure
文献类型：期刊论文
| 作者 | Yan, QF; Yu, JZ |
| 刊名 | Japanese journal of applied physics part 1-regular papers short notes & review papers
 |
| 出版日期 | 2003-07-01 |
| 卷号 | 42期号:7a页码:4361-4362 |
| 关键词 | Electrooptical switch Silicon-on-insulator Modulation area structure Plasma dispersion effect Integrated opotoelectronics |
| ISSN号 | 0021-4922 |
| DOI | 10.1143/jjap.42.4361 |
| 通讯作者 | Yan, qf() |
| 英文摘要 | This paper reports on the simulation of two 2 x 2 electrooptical switches with different modulation area structures in silicon-on-insulator (soi). a two-dimensional (2d) semiconductor device simulation tool pisces-ii has been used to analyze the dc and transient behaviors of the two devices. the modeling results show that the switch with an n+-i-p+-i-n+ modulation structure has a much faster response speed than the device with a p+-i-n+ modulation structure, although the former requires slightly stronger injection power. |
| WOS关键词 | WAVE-GUIDE ; DEVICES |
| WOS研究方向 | Physics |
| WOS类目 | Physics, Applied |
| 语种 | 英语 |
| WOS记录号 | WOS:000184662000042 |
| 出版者 | INST PURE APPLIED PHYSICS |
| URI标识 | http://www.irgrid.ac.cn/handle/1471x/2429269 |
| 专题 | 半导体研究所 |
| 通讯作者 | Yan, QF |
| 作者单位 | Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, Beijing 100083, Peoples R China |
| 推荐引用方式 GB/T 7714 | Yan, QF,Yu, JZ. Improving response speed of electrooptical switch in silicon-on-insulator by modifying modulation area structure[J]. Japanese journal of applied physics part 1-regular papers short notes & review papers,2003,42(7a):4361-4362. |
| APA | Yan, QF,&Yu, JZ.(2003).Improving response speed of electrooptical switch in silicon-on-insulator by modifying modulation area structure.Japanese journal of applied physics part 1-regular papers short notes & review papers,42(7a),4361-4362. |
| MLA | Yan, QF,et al."Improving response speed of electrooptical switch in silicon-on-insulator by modifying modulation area structure".Japanese journal of applied physics part 1-regular papers short notes & review papers 42.7a(2003):4361-4362. |
入库方式： iSwitch采集
来源：半导体研究所
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