The evolution of inas/inalas/ingaalas quantum dots after rapid thermal annealing
文献类型：期刊论文
| 作者 | Zhang, ZY; Jin, P; Li, CM; Ye, XL; Meng, XQ; Xu, B; Liu, FQ; Wang, ZG |
| 刊名 | Journal of crystal growth
 |
| 出版日期 | 2003-06-01 |
| 卷号 | 253期号:1-4页码:59-63 |
| 关键词 | Low dimensional structures Nanostructures Quantum dots Molecular beam epitaxy Semiconducting iii-v materials Laser diode |
| ISSN号 | 0022-0248 |
| DOI | 10.1016/s0022-0248(03)01014-5 |
| 通讯作者 | Zhang, zy() |
| 英文摘要 | We have studied how the optical properties of inas self-assembled quantum dots (qds) grown on gaas substrate are affected when depositing an inalas/ingaas combination overgrowth layer directly on it by rapid thermal annealing (rta). the photoluminescence measurement demonstrated that the inas qds experiences an abnormal variation during the course of rta. the model of transformation of inas-inalas-ingaalas could be used to well explain the phenomena. (c) 2003 elsevier science b.v. all rights reserved. |
| WOS关键词 | TIME-RESOLVED PHOTOLUMINESCENCE |
| WOS研究方向 | Crystallography ; Materials Science ; Physics |
| WOS类目 | Crystallography ; Materials Science, Multidisciplinary ; Physics, Applied |
| 语种 | 英语 |
| WOS记录号 | WOS:000183223100009 |
| 出版者 | ELSEVIER SCIENCE BV |
| URI标识 | http://www.irgrid.ac.cn/handle/1471x/2429270 |
| 专题 | 半导体研究所 |
| 通讯作者 | Zhang, ZY |
| 作者单位 | Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, Beijing 100083, Peoples R China |
| 推荐引用方式 GB/T 7714 | Zhang, ZY,Jin, P,Li, CM,et al. The evolution of inas/inalas/ingaalas quantum dots after rapid thermal annealing[J]. Journal of crystal growth,2003,253(1-4):59-63. |
| APA | Zhang, ZY.,Jin, P.,Li, CM.,Ye, XL.,Meng, XQ.,...&Wang, ZG.(2003).The evolution of inas/inalas/ingaalas quantum dots after rapid thermal annealing.Journal of crystal growth,253(1-4),59-63. |
| MLA | Zhang, ZY,et al."The evolution of inas/inalas/ingaalas quantum dots after rapid thermal annealing".Journal of crystal growth 253.1-4(2003):59-63. |
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来源：半导体研究所
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