Optical investigation on the annealing effect and its mechanism of gainas/ganas quantum wells
文献类型：期刊论文
| 作者 | Bian, LF; Jiang, DS; Lu, SL |
| 刊名 | Journal of crystal growth
 |
| 出版日期 | 2003-06-01 |
| 卷号 | 253期号:1-4页码:155-160 |
| 关键词 | Interdiffusion Post-annealing Quantum wells Gainnas/gaas |
| ISSN号 | 0022-0248 |
| DOI | 10.1016/s0022-0248(03)01079-0 |
| 通讯作者 | Bian, lf() |
| 英文摘要 | Thermal annealing of gainas/ganas quantum wells (qws) as well as other nitrogen- and indium-contained qw structures grown by molecular beam epitaxy and its effect on optical properties are investigated. the photoluminescence (pl) and photovoltaic (pv) spectra of annealed gainas/ganas qws show that the luminescence properties become degraded due to the n diffusion from the ganas barrier layers to the gainas well layer. meantime, the annealing-induced blueshift of the pl peak in this qw system is mainly induced by the change of in distribution, suggesting that the in reorganization is greatly assisted by the n-induced defects. the elucidation of annealing effect in gainas/ganas qw samples is helpful for a better understanding to the annealing effect in the gainnas/gaas qws. (c) 2003 elsevier science b.v. all rights reserved. |
| WOS关键词 | MOLECULAR-BEAM EPITAXY ; CARRIER LOCALIZATION ; GAINNAS ; LUMINESCENCE ; ORIGIN ; GAASN |
| WOS研究方向 | Crystallography ; Materials Science ; Physics |
| WOS类目 | Crystallography ; Materials Science, Multidisciplinary ; Physics, Applied |
| 语种 | 英语 |
| WOS记录号 | WOS:000183223100022 |
| 出版者 | ELSEVIER SCIENCE BV |
| URI标识 | http://www.irgrid.ac.cn/handle/1471x/2429275 |
| 专题 | 半导体研究所 |
| 通讯作者 | Bian, LF |
| 作者单位 | Chinese Acad Sci, Inst Semicond, State Key Lab Superlattices & Microstruct, Beijing 100083, Peoples R China |
| 推荐引用方式 GB/T 7714 | Bian, LF,Jiang, DS,Lu, SL. Optical investigation on the annealing effect and its mechanism of gainas/ganas quantum wells[J]. Journal of crystal growth,2003,253(1-4):155-160. |
| APA | Bian, LF,Jiang, DS,&Lu, SL.(2003).Optical investigation on the annealing effect and its mechanism of gainas/ganas quantum wells.Journal of crystal growth,253(1-4),155-160. |
| MLA | Bian, LF,et al."Optical investigation on the annealing effect and its mechanism of gainas/ganas quantum wells".Journal of crystal growth 253.1-4(2003):155-160. |
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来源：半导体研究所
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