Effects of reactor pressure on gan nucleation layers and subsequent gan epilayers grown on sapphire substrate
文献类型：期刊论文
| 作者 | Chen, J; Zhang, SM; Zhang, BS; Zhu, JJ; Feng, G; Shen, XM; Wang, YT; Yang, H; Zheng, WC |
| 刊名 | Journal of crystal growth
 |
| 出版日期 | 2003-07-01 |
| 卷号 | 254期号:3-4页码:348-352 |
| 关键词 | In situ laser reflectometry Lateral overgrowth Metalorganic chemical vapor deposition Gan |
| ISSN号 | 0022-0248 |
| DOI | 10.1016/s0022-0248(03)01235-1 |
| 通讯作者 | Chen, j() |
| 英文摘要 | The influence of reactor pressure on gan nucleation layer (nl) and the quality of subsequent gan on sapphire is studied. the layers were grown by low-pressure metalorganic chemical vapor deposition (mocvd) on c-plane sapphire substrates and investigated by in situ laser reflectometry, atomic force microscope, scanning electron microscope, x-ray diffraction and photoluminescence. with the increase of reactor pressure prior to high-temperature gan growth, the size of gan nuclei formed after annealing decreases, the spacing between nucleation sites increases and the coalescence of gan nuclei is deferred. the optical and crystalline qualities of gan epilayer were improved when nls were deposited at high pressure. the elongated lateral overgrowth of gan islands is responsible for the quality improvement. (c) 2003 elsevier science b.v. all rights reserved. |
| WOS关键词 | CHEMICAL-VAPOR-DEPOSITION ; HIGH-QUALITY GAN ; BUFFER LAYER ; THREADING DISLOCATIONS ; TEMPERATURE ; EVOLUTION ; SURFACE ; MOVPE |
| WOS研究方向 | Crystallography ; Materials Science ; Physics |
| WOS类目 | Crystallography ; Materials Science, Multidisciplinary ; Physics, Applied |
| 语种 | 英语 |
| WOS记录号 | WOS:000183468100009 |
| 出版者 | ELSEVIER SCIENCE BV |
| URI标识 | http://www.irgrid.ac.cn/handle/1471x/2429283 |
| 专题 | 半导体研究所 |
| 通讯作者 | Chen, J |
| 作者单位 | 1.Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, Beijing 100083, Peoples R China 2.Sichuan Univ, Dept Mat Sci, Chengdu 610064, Peoples R China |
| 推荐引用方式 GB/T 7714 | Chen, J,Zhang, SM,Zhang, BS,et al. Effects of reactor pressure on gan nucleation layers and subsequent gan epilayers grown on sapphire substrate[J]. Journal of crystal growth,2003,254(3-4):348-352. |
| APA | Chen, J.,Zhang, SM.,Zhang, BS.,Zhu, JJ.,Feng, G.,...&Zheng, WC.(2003).Effects of reactor pressure on gan nucleation layers and subsequent gan epilayers grown on sapphire substrate.Journal of crystal growth,254(3-4),348-352. |
| MLA | Chen, J,et al."Effects of reactor pressure on gan nucleation layers and subsequent gan epilayers grown on sapphire substrate".Journal of crystal growth 254.3-4(2003):348-352. |
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来源：半导体研究所
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