The effect of inserting strain-compensated ganas layers on the luminescence properties of gainnas/gaas quantum well
文献类型：期刊论文
| 作者 | Bian, LF; Jiang, DS; Lu, SL; Huang, JS; Chang, K; Li, LH; Harmand, JC |
| 刊名 | Journal of crystal growth
 |
| 出版日期 | 2003-04-01 |
| 卷号 | 250期号:3-4页码:339-344 |
| 关键词 | Quantum wells Gainnas Strain-compensated ganas layers |
| ISSN号 | 0022-0248 |
| DOI | 10.1016/s0022-0248(02)02464-8 |
| 通讯作者 | Bian, lf() |
| 英文摘要 | Photoluminescence (pl) properties of gainnas/gaas quantum wells (qws) with strain-compensated ganas layers grown by molecular beam epitaxy are investigated. the temperature-dependent pl spectra of gainnas/gaas qw with and without ganas layers are compared and carefully studied. it is shown that the introduction of ganas layers between well and barrier can effectively extend the emission wavelength, mainly due to the reduction of the barrier potential. the pl peak position up to 1.41 mum is observed at the room temperature. after adding the ganas layers into qw structures, there is no essential deterioration of luminescence efficiency. n-induced localization states are also not remarkably influenced. it implies that with optimized growth condition, high-quality gainnas/gaas qws with strain-compensated ganas layers can be achieved. (c) 2003 elsevier science b.v. all rights reserved. |
| WOS关键词 | MOLECULAR-BEAM EPITAXY ; PHOTOLUMINESCENCE ; LASERS ; THRESHOLD |
| WOS研究方向 | Crystallography ; Materials Science ; Physics |
| WOS类目 | Crystallography ; Materials Science, Multidisciplinary ; Physics, Applied |
| 语种 | 英语 |
| WOS记录号 | WOS:000181517900010 |
| 出版者 | ELSEVIER SCIENCE BV |
| URI标识 | http://www.irgrid.ac.cn/handle/1471x/2429284 |
| 专题 | 半导体研究所 |
| 通讯作者 | Bian, LF |
| 作者单位 | 1.Chinese Acad Sci, Inst Semicond, State Key Lab Superlattices & Microstruct, Beijing 100083, Peoples R China 2.CNRS, LPN, F-91460 Marcoussis, France |
| 推荐引用方式 GB/T 7714 | Bian, LF,Jiang, DS,Lu, SL,et al. The effect of inserting strain-compensated ganas layers on the luminescence properties of gainnas/gaas quantum well[J]. Journal of crystal growth,2003,250(3-4):339-344. |
| APA | Bian, LF.,Jiang, DS.,Lu, SL.,Huang, JS.,Chang, K.,...&Harmand, JC.(2003).The effect of inserting strain-compensated ganas layers on the luminescence properties of gainnas/gaas quantum well.Journal of crystal growth,250(3-4),339-344. |
| MLA | Bian, LF,et al."The effect of inserting strain-compensated ganas layers on the luminescence properties of gainnas/gaas quantum well".Journal of crystal growth 250.3-4(2003):339-344. |
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来源：半导体研究所
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