Electronic properties of sulfur passivated undoped-n(+) type gaas surface studied by photoreflectance
文献类型：期刊论文
| 作者 | Jin, P; Pan, SH; Li, YG; Zhang, CZ; Wang, ZG |
| 刊名 | Applied surface science
 |
| 出版日期 | 2003-09-30 |
| 卷号 | 218期号:1-4页码:210-214 |
| 关键词 | Sulfur passivation Franz-keldysh oscillations Undoped-n(+) type gaas Complex fourier transformation |
| ISSN号 | 0169-4332 |
| DOI | 10.1016/s0169-4332(03)00589-0 |
| 通讯作者 | Jin, p() |
| 英文摘要 | Photoreflectance (pr) has been used to study surface electronic properties (electric field, fermi level pinning, and density of surface states) of undoped-n(+) (un+) gaas treated in the solution of ammonium sulfide in isopropanol. complex fourier transformation (cft) of pr spectra from passivated surface shows that the sulfur overlay on gaas surface makes no contribution to franz-keldysh oscillations (fkos). the barrier height measured by pr is derived from surface states directly, rather than the total barrier height, which includes the potentials derived from ga-s and as-s dipole layers. comparing with native oxidated surface, the passivation leads to 80 mev movement of surface fermi level towards the conduction band minimum, and reduction by more than one order in density of surface states. (c) 2003 elsevier science b.v. all rights reserved. |
| WOS关键词 | FRANZ-KELDYSH OSCILLATIONS ; GAAS(001) SURFACES ; GAAS(100) ; PHOTOEMISSION ; SPECTROSCOPY ; ENHANCEMENT |
| WOS研究方向 | Chemistry ; Materials Science ; Physics |
| WOS类目 | Chemistry, Physical ; Materials Science, Coatings & Films ; Physics, Applied ; Physics, Condensed Matter |
| 语种 | 英语 |
| WOS记录号 | WOS:000185491500027 |
| 出版者 | ELSEVIER SCIENCE BV |
| URI标识 | http://www.irgrid.ac.cn/handle/1471x/2429290 |
| 专题 | 半导体研究所 |
| 通讯作者 | Jin, P |
| 作者单位 | 1.Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, Beijing 100083, Peoples R China 2.Nankai Univ, Dept Phys, Tianjin 300071, Peoples R China |
| 推荐引用方式 GB/T 7714 | Jin, P,Pan, SH,Li, YG,et al. Electronic properties of sulfur passivated undoped-n(+) type gaas surface studied by photoreflectance[J]. Applied surface science,2003,218(1-4):210-214. |
| APA | Jin, P,Pan, SH,Li, YG,Zhang, CZ,&Wang, ZG.(2003).Electronic properties of sulfur passivated undoped-n(+) type gaas surface studied by photoreflectance.Applied surface science,218(1-4),210-214. |
| MLA | Jin, P,et al."Electronic properties of sulfur passivated undoped-n(+) type gaas surface studied by photoreflectance".Applied surface science 218.1-4(2003):210-214. |
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来源：半导体研究所
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