Gan1-xpx ternary alloys with high p composition grown by metal-organic chemical vapor deposition
文献类型：期刊论文
| 作者 | Chen, DJ; Shen, B; Bi, ZX; Zhang, KX; Gu, SL; Zhang, R; Shi, Y; Zheng, YD; Sun, XH; Wan, SK |
| 刊名 | Journal of crystal growth
 |
| 出版日期 | 2003-07-01 |
| 卷号 | 255期号:1-2页码:52-56 |
| 关键词 | Metalorganic chemical vapor deposition Nitrides Semiconducting iii-v materials |
| ISSN号 | 0022-0248 |
| DOI | 10.1016/s0022-0248(03)01200-4 |
| 通讯作者 | Shen, b() |
| 英文摘要 | Gan1-xpx ternary alloys with high p compositions were deposited on sapphire substrates by means of metal-organic chemical vapor deposition. depth profiles of the elements indicate that the maximum p/n composition ratio is about 17% and a uniform distribution of the p atoms in the alloys is achieved. 2theta/omega xrd spectra demonstrate that the (0002) peak of the gan1-xpx alloys shifts to smaller angle with increasing p composition. from the photoluminescence (pl) spectra, the red shifts to the bandedge emission of gan are determined to be 73, 78, 100 and 87 mev for the gan1-xpx alloys with the p/n composition ratios of 3%, 11%, 15% and 17%, respectively. no pl peak related to gap is observed, indicating that the phase separation between gan and gap is well suppressed in our gan1-xpx samples. (c) 2003 elsevier science b.v. all rights reserved. |
| WOS关键词 | MOLECULAR-BEAM EPITAXY ; GAN-RICH SIDE ; RADICAL CELL ; III-V |
| WOS研究方向 | Crystallography ; Materials Science ; Physics |
| WOS类目 | Crystallography ; Materials Science, Multidisciplinary ; Physics, Applied |
| 语种 | 英语 |
| WOS记录号 | WOS:000183767000006 |
| 出版者 | ELSEVIER SCIENCE BV |
| URI标识 | http://www.irgrid.ac.cn/handle/1471x/2429294 |
| 专题 | 半导体研究所 |
| 通讯作者 | Shen, B |
| 作者单位 | 1.Nanjing Univ, Natl Lab Solid State Microstruct, Nanjing 210093, Peoples R China 2.Nanjing Univ, Dept Phys, Nanjing 210093, Peoples R China 3.Chinese Acad Sci, Inst Semicond, Lab Semicond Mat Sci, Beijing 100083, Peoples R China |
| 推荐引用方式 GB/T 7714 | Chen, DJ,Shen, B,Bi, ZX,et al. Gan1-xpx ternary alloys with high p composition grown by metal-organic chemical vapor deposition[J]. Journal of crystal growth,2003,255(1-2):52-56. |
| APA | Chen, DJ.,Shen, B.,Bi, ZX.,Zhang, KX.,Gu, SL.,...&Wang, ZG.(2003).Gan1-xpx ternary alloys with high p composition grown by metal-organic chemical vapor deposition.Journal of crystal growth,255(1-2),52-56. |
| MLA | Chen, DJ,et al."Gan1-xpx ternary alloys with high p composition grown by metal-organic chemical vapor deposition".Journal of crystal growth 255.1-2(2003):52-56. |
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来源：半导体研究所
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