Influence of heated catalyzer on thermal distribution of substrate in hwcvd system
文献类型:期刊论文
作者 | Zhang, Q; Zhu, M; Wang, L; Liu, E |
刊名 | Thin solid films
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出版日期 | 2003-04-22 |
卷号 | 430期号:1-2页码:50-53 |
关键词 | Catalyzer Hot-wire chemical vapor deposition Simulation |
ISSN号 | 0040-6090 |
DOI | 10.1016/s0040-6090(03)00137-8 |
通讯作者 | Zhu, m() |
英文摘要 | Based on stefan-boltzman and lambert theorems, the radiation energy distribution on substrate (reds) from catalyzer with parallel filament geometry has been simulated by variation of filament and system layout in hot-wire chemical vapor deposition. the reds uniformity is sensitive to the distance between filament and substrate d(f-s) when d(f-s) less than or equal to 4 cm. as d(f-s) > 4 cm, the reds uniformity is independent of d(f-s) and is mainly determined by filament number and filament separation. two-dimensional calculation shows that the reds uniformity is limited by temperature decay at filament edges. the simulation data are in good agreement with experiments. (c) 2003 elsevier science b.v. all rights reserved. |
WOS关键词 | AMORPHOUS-SILICON ; DEPOSITION |
WOS研究方向 | Materials Science ; Physics |
WOS类目 | Materials Science, Multidisciplinary ; Materials Science, Coatings & Films ; Physics, Applied ; Physics, Condensed Matter |
语种 | 英语 |
WOS记录号 | WOS:000183239800012 |
出版者 | ELSEVIER SCIENCE SA |
URI标识 | http://www.irgrid.ac.cn/handle/1471x/2429300 |
专题 | 半导体研究所 |
通讯作者 | Zhu, M |
作者单位 | 1.Chinese Acad Sci, Dept Phys, Grad Sch, Beijing 100039, Peoples R China 2.Chinese Acad Sci, Inst Semicond, Beijing 100083, Peoples R China |
推荐引用方式 GB/T 7714 | Zhang, Q,Zhu, M,Wang, L,et al. Influence of heated catalyzer on thermal distribution of substrate in hwcvd system[J]. Thin solid films,2003,430(1-2):50-53. |
APA | Zhang, Q,Zhu, M,Wang, L,&Liu, E.(2003).Influence of heated catalyzer on thermal distribution of substrate in hwcvd system.Thin solid films,430(1-2),50-53. |
MLA | Zhang, Q,et al."Influence of heated catalyzer on thermal distribution of substrate in hwcvd system".Thin solid films 430.1-2(2003):50-53. |
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来源:半导体研究所
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