中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
Influence of heated catalyzer on thermal distribution of substrate in hwcvd system

文献类型:期刊论文

作者Zhang, Q; Zhu, M; Wang, L; Liu, E
刊名Thin solid films
出版日期2003-04-22
卷号430期号:1-2页码:50-53
关键词Catalyzer Hot-wire chemical vapor deposition Simulation
ISSN号0040-6090
DOI10.1016/s0040-6090(03)00137-8
通讯作者Zhu, m()
英文摘要Based on stefan-boltzman and lambert theorems, the radiation energy distribution on substrate (reds) from catalyzer with parallel filament geometry has been simulated by variation of filament and system layout in hot-wire chemical vapor deposition. the reds uniformity is sensitive to the distance between filament and substrate d(f-s) when d(f-s) less than or equal to 4 cm. as d(f-s) > 4 cm, the reds uniformity is independent of d(f-s) and is mainly determined by filament number and filament separation. two-dimensional calculation shows that the reds uniformity is limited by temperature decay at filament edges. the simulation data are in good agreement with experiments. (c) 2003 elsevier science b.v. all rights reserved.
WOS关键词AMORPHOUS-SILICON ; DEPOSITION
WOS研究方向Materials Science ; Physics
WOS类目Materials Science, Multidisciplinary ; Materials Science, Coatings & Films ; Physics, Applied ; Physics, Condensed Matter
语种英语
WOS记录号WOS:000183239800012
出版者ELSEVIER SCIENCE SA
URI标识http://www.irgrid.ac.cn/handle/1471x/2429300
专题半导体研究所
通讯作者Zhu, M
作者单位1.Chinese Acad Sci, Dept Phys, Grad Sch, Beijing 100039, Peoples R China
2.Chinese Acad Sci, Inst Semicond, Beijing 100083, Peoples R China
推荐引用方式
GB/T 7714
Zhang, Q,Zhu, M,Wang, L,et al. Influence of heated catalyzer on thermal distribution of substrate in hwcvd system[J]. Thin solid films,2003,430(1-2):50-53.
APA Zhang, Q,Zhu, M,Wang, L,&Liu, E.(2003).Influence of heated catalyzer on thermal distribution of substrate in hwcvd system.Thin solid films,430(1-2),50-53.
MLA Zhang, Q,et al."Influence of heated catalyzer on thermal distribution of substrate in hwcvd system".Thin solid films 430.1-2(2003):50-53.

入库方式: iSwitch采集

来源:半导体研究所

浏览0
下载0
收藏0
其他版本

除非特别说明,本系统中所有内容都受版权保护,并保留所有权利。