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Surface morphology and optical property of 1.3 mu m in0.5ga0.5as/gaas self-organized quantum dots grown by mbe

文献类型:期刊论文

作者Lan, Q; Niu, ZC; Zhou, DY; Kong, YC; Wang, XD; Miao, ZH; Feng, SL
刊名Physica e-low-dimensional systems & nanostructures
出版日期2003-04-01
卷号17期号:1-4页码:114-116
关键词Quantum dots Molecular beam epitaxy Photoluminescence
ISSN号1386-9477
DOI10.1016/s1386-9477(02)00735-x
通讯作者Niu, zc()
英文摘要Surface morphology and optical properties of 1.3 mum self-organized ingaas/gaas quantum dots structure grown by molecular beam epitaxy have been investigated by atomic force microscopy and photoluminescence measurements. it has been shown that the surface morphology evolution and emission wavelengths of ingaas/gaas qds can be controlled effectively via cycled monolayer deposition methods due to the reduction of the surface strain. our results provide important information for optimizing the epitaxial parameters for obtaining 1.3 mum long wavelength emission quantum dots structures. (c) 2002 elsevier science b.v. all rights reserved.
WOS研究方向Science & Technology - Other Topics ; Physics
WOS类目Nanoscience & Nanotechnology ; Physics, Condensed Matter
语种英语
WOS记录号WOS:000182700700038
出版者ELSEVIER SCIENCE BV
URI标识http://www.irgrid.ac.cn/handle/1471x/2429302
专题半导体研究所
通讯作者Niu, ZC
作者单位Chinese Acad Sci, Natl Lab Superlattices, Inst Semicond, Beijing 100083, Peoples R China
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Lan, Q,Niu, ZC,Zhou, DY,et al. Surface morphology and optical property of 1.3 mu m in0.5ga0.5as/gaas self-organized quantum dots grown by mbe[J]. Physica e-low-dimensional systems & nanostructures,2003,17(1-4):114-116.
APA Lan, Q.,Niu, ZC.,Zhou, DY.,Kong, YC.,Wang, XD.,...&Feng, SL.(2003).Surface morphology and optical property of 1.3 mu m in0.5ga0.5as/gaas self-organized quantum dots grown by mbe.Physica e-low-dimensional systems & nanostructures,17(1-4),114-116.
MLA Lan, Q,et al."Surface morphology and optical property of 1.3 mu m in0.5ga0.5as/gaas self-organized quantum dots grown by mbe".Physica e-low-dimensional systems & nanostructures 17.1-4(2003):114-116.

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来源:半导体研究所

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