Abnormal effect of growth interruption on gasb quantum dots formation grown by molecular beam epitaxy
文献类型：期刊论文
| 作者 | Luo, XD; Xu, ZY; Wang, YQ; Wang, WX; Wang, JN; Ge, WK |
| 刊名 | Journal of crystal growth
 |
| 出版日期 | 2003 |
| 卷号 | 247期号:1-2页码:99-104 |
| 关键词 | Growth interruption Molecular beam epitaxy Quantum dots Gasb |
| ISSN号 | 0022-0248 |
| 通讯作者 | Luo, xd() |
| 英文摘要 | The growth interruption (gi) effect on gasb quantum dot formation grown on gaas by molecular beam epitaxy was investigated. the structure characterization was performed by reflection high-energy electron diffraction (rheed), along with photoluminescence measurements. it is found that the gi can significantly change the surface morphology of gasb qds. during the gi, the qds structures can be smoothed out and turned into a 2d-like structure. the time duration of the gi required for the 3d/2d transition depends on the growth time of the gasb layer. it increases with the increase of the growth time. our results are explained by a combined effect of the stress relaxation process and surface exchange reactions during the gi. (c) 2002 elsevier science b.v. all rights reserved. |
| WOS关键词 | WELLS |
| WOS研究方向 | Crystallography ; Materials Science ; Physics |
| WOS类目 | Crystallography ; Materials Science, Multidisciplinary ; Physics, Applied |
| 语种 | 英语 |
| WOS记录号 | WOS:000180078300015 |
| 出版者 | ELSEVIER SCIENCE BV |
| URI标识 | http://www.irgrid.ac.cn/handle/1471x/2429303 |
| 专题 | 半导体研究所 |
| 通讯作者 | Luo, XD |
| 作者单位 | 1.Chinese Acad Sci, Inst Semicond, NLSM, Beijing 100083, Peoples R China 2.Hong Kong Univ Sci & Technol, Dept Phys, Hong Kong, Hong Kong, Peoples R China |
| 推荐引用方式 GB/T 7714 | Luo, XD,Xu, ZY,Wang, YQ,et al. Abnormal effect of growth interruption on gasb quantum dots formation grown by molecular beam epitaxy[J]. Journal of crystal growth,2003,247(1-2):99-104. |
| APA | Luo, XD,Xu, ZY,Wang, YQ,Wang, WX,Wang, JN,&Ge, WK.(2003).Abnormal effect of growth interruption on gasb quantum dots formation grown by molecular beam epitaxy.Journal of crystal growth,247(1-2),99-104. |
| MLA | Luo, XD,et al."Abnormal effect of growth interruption on gasb quantum dots formation grown by molecular beam epitaxy".Journal of crystal growth 247.1-2(2003):99-104. |
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来源：半导体研究所
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