Study on variable capacitance diode of (p)nc-si : h/(n)c-si heterojunction
文献类型：期刊论文
| 作者 | Wei, WS; Wang, TM; Zhang, CX; Li, GH; Li, YX |
| 刊名 | Vacuum
 |
| 出版日期 | 2003-07-25 |
| 卷号 | 71期号:4页码:465-469 |
| 关键词 | Nc-si : h film (p)nc-si : h/(n)c-si heterojunction Variable capacitance diode |
| ISSN号 | 0042-207X |
| DOI | 10.1016/s0042-207x(03)00034-4 |
| 通讯作者 | Wei, ws() |
| 英文摘要 | Hydrogenated nanocrystalline silicon (nc-si:h) layers of boron-doped increasing step by step was deposited on n-type crystalline silicon substrate using plasma enhanced chemical vapor deposition (pecvd) system. after evaporating ohm contact electrode on the side of substrate and on the side of nc-si:h film, a structure of electrode/ (p)nc-si:h/(n)c-si/electrode was obtained. it is confirmed by electrical measurement such as i-v curve, c-v curve and dlts that this is a variable capacitance diode. (c) 2003 elsevier science ltd. all rights reserved. |
| WOS关键词 | NANOCRYSTALLINE SILICON FILMS ; ELECTRICAL CHARACTERIZATION ; CONDUCTION MECHANISM ; SPECTROSCOPY ; STATES |
| WOS研究方向 | Materials Science ; Physics |
| WOS类目 | Materials Science, Multidisciplinary ; Physics, Applied |
| 语种 | 英语 |
| WOS记录号 | WOS:000184263800005 |
| 出版者 | PERGAMON-ELSEVIER SCIENCE LTD |
| URI标识 | http://www.irgrid.ac.cn/handle/1471x/2429307 |
| 专题 | 半导体研究所 |
| 通讯作者 | Wei, WS |
| 作者单位 | 1.Beijing Univ Aeronaut & Astronaut, Sch Sci, Ctr Mat Phys & Chem, Sch Sci, Beijing 100083, Peoples R China 2.Beijing Univ Aeronaut & Astronaut, Inst Optielect, Beijing 100083, Peoples R China 3.Chinese Acad Sci, Inst Semicond, Natl Key Lab Semicond Superlattice & Microstruct, Beijing 100083, Peoples R China |
| 推荐引用方式 GB/T 7714 | Wei, WS,Wang, TM,Zhang, CX,et al. Study on variable capacitance diode of (p)nc-si : h/(n)c-si heterojunction[J]. Vacuum,2003,71(4):465-469. |
| APA | Wei, WS,Wang, TM,Zhang, CX,Li, GH,&Li, YX.(2003).Study on variable capacitance diode of (p)nc-si : h/(n)c-si heterojunction.Vacuum,71(4),465-469. |
| MLA | Wei, WS,et al."Study on variable capacitance diode of (p)nc-si : h/(n)c-si heterojunction".Vacuum 71.4(2003):465-469. |
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来源：半导体研究所
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