Mnsb/porous silicon hybrid structure prepared by physical vapor deposition
文献类型：期刊论文
| 作者 | Xiu, HX; Chen, NF; Peng, CT |
| 刊名 | Journal of crystal growth
 |
| 出版日期 | 2003-11-01 |
| 卷号 | 259期号:1-2页码:110-114 |
| 关键词 | Physical vapor deposition processes Manganese antimonide Porous silicon |
| ISSN号 | 0022-0248 |
| DOI | 10.1016/s0022-0248(03)01591-4 |
| 通讯作者 | Xiu, hx() |
| 英文摘要 | Mnsb/porous silicon hybrid structure was prepared by physical vapor deposition technique. the structure and surface morphology of the mnsb films were analyzed by x-ray diffraction and scanning electron microscope, respectively. the magnetic hysteresis loops were obtained by an alternative gradient magnetometer. based on the measurements, only mnsb phase was found and the surface morphology was rough and island-like. mnsb thin films show ferromagnetism at room temperature. (c) 2003 elsevier b.v. all rights reserved. |
| WOS关键词 | POROUS-SILICON ; FILMS ; MNSB ; EPITAXY |
| WOS研究方向 | Crystallography ; Materials Science ; Physics |
| WOS类目 | Crystallography ; Materials Science, Multidisciplinary ; Physics, Applied |
| 语种 | 英语 |
| WOS记录号 | WOS:000186123700017 |
| 出版者 | ELSEVIER SCIENCE BV |
| URI标识 | http://www.irgrid.ac.cn/handle/1471x/2429314 |
| 专题 | 半导体研究所 |
| 通讯作者 | Xiu, HX |
| 作者单位 | 1.Chinese Acad Sci, Key Lab Senicond Mat Sci, Inst Semicond Mat Sci, Beijing 100083, Peoples R China 2.Univ Sci & Technol Beijing, Sch Mat Sci & Engn, Beijing 100083, Peoples R China 3.Chinese Acad Sci, Natl Micrograv Lab, Beijing 100080, Peoples R China |
| 推荐引用方式 GB/T 7714 | Xiu, HX,Chen, NF,Peng, CT. Mnsb/porous silicon hybrid structure prepared by physical vapor deposition[J]. Journal of crystal growth,2003,259(1-2):110-114. |
| APA | Xiu, HX,Chen, NF,&Peng, CT.(2003).Mnsb/porous silicon hybrid structure prepared by physical vapor deposition.Journal of crystal growth,259(1-2),110-114. |
| MLA | Xiu, HX,et al."Mnsb/porous silicon hybrid structure prepared by physical vapor deposition".Journal of crystal growth 259.1-2(2003):110-114. |
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来源：半导体研究所
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