Strain accommodation of 3c-sic grown on hydrogen-implanted si (001) substrate
文献类型：期刊论文
| 作者 | Zhang, ZC; Chen, YH; Li, DB; Zhang, FQ; Yang, SY; Ma, BS; Sun, GS; Wang, ZG; Zhang, XP |
| 刊名 | Journal of crystal growth
 |
| 出版日期 | 2003-10-01 |
| 卷号 | 257期号:3-4页码:321-325 |
| 关键词 | Substrate Heteroepitaxy Low pressure chemical vapor deposition Semiconducting silicon carbide |
| ISSN号 | 0022-0248 |
| DOI | 10.1016/s0022-0248(03)01476-3 |
| 通讯作者 | Zhang, zc() |
| 英文摘要 | The hydrogen-implanted si substrate has been used for the fabrication of the "compliant substrate", which can accommodate the mismatch strain during the heteroepitaxy. the compliance of the substrate can be modulated by the energy and dose of implanted hydrogen. in addition, the defects caused by implantation act as the gettering center for the internal gettering of the harmful metallic impurities. compared with sic films growth on substrate without implantation. all the measurements indicated that the mismatch strains in the sic films grown on this substrate have been released and the crystalline qualities have been improved. it is a practical technique used for the compliant substrate fabrication and compatible with the semiconductor industry. (c) 2003 elsevier b.v. all rights reserved. |
| WOS关键词 | COMPLIANT SUBSTRATE ; CRITICAL THICKNESS ; SILICON ; RELAXATION ; MECHANISM ; DEFECTS ; LAYERS |
| WOS研究方向 | Crystallography ; Materials Science ; Physics |
| WOS类目 | Crystallography ; Materials Science, Multidisciplinary ; Physics, Applied |
| 语种 | 英语 |
| WOS记录号 | WOS:000185407400018 |
| 出版者 | ELSEVIER SCIENCE BV |
| URI标识 | http://www.irgrid.ac.cn/handle/1471x/2429315 |
| 专题 | 半导体研究所 |
| 通讯作者 | Zhang, ZC |
| 作者单位 | 1.Chinese Acad Sci, Lab Semicond Mat Sci, Inst Semicond, Beijing 100083, Peoples R China 2.Peking Univ, Sch Phys, Electron Microscopy Lab, Beijing 100871, Peoples R China |
| 推荐引用方式 GB/T 7714 | Zhang, ZC,Chen, YH,Li, DB,et al. Strain accommodation of 3c-sic grown on hydrogen-implanted si (001) substrate[J]. Journal of crystal growth,2003,257(3-4):321-325. |
| APA | Zhang, ZC.,Chen, YH.,Li, DB.,Zhang, FQ.,Yang, SY.,...&Zhang, XP.(2003).Strain accommodation of 3c-sic grown on hydrogen-implanted si (001) substrate.Journal of crystal growth,257(3-4),321-325. |
| MLA | Zhang, ZC,et al."Strain accommodation of 3c-sic grown on hydrogen-implanted si (001) substrate".Journal of crystal growth 257.3-4(2003):321-325. |
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来源：半导体研究所
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