The effects of rapid thermal annealing on the optical properties of zn1-xmnxse epilayer grown by mocvd on gaas substrate
文献类型：期刊论文
| 作者 | Lu, SL; Wang, JN; Huang, JS; Bian, LF; Jiang, DS; Yang, CL; Dai, JM; Ge, WK; Wang, YQ; Zhang, JY |
| 刊名 | Journal of crystal growth
 |
| 出版日期 | 2003-03-01 |
| 卷号 | 249期号:3-4页码:538-543 |
| 关键词 | Photoluminescence Metalorganic chemical vapor deposition Epilayer Semiconducting ii-vi materials |
| ISSN号 | 0022-0248 |
| DOI | 10.1016/s0022-0248(02)02354-0 |
| 通讯作者 | Lu, sl() |
| 英文摘要 | Zn1-xmnxse thin films with different mn compositions are grown by metal-organic chemical vapor deposition on gaas substrate. good crystallinity of sample is evidenced by x-ray diffraction and rocking-curve measurements. photoluminescence (pl) properties were carefully studied. a dominant pl peak close to the band edge is observed at low temperature for samples with higher mn concentration. the temperature-dependent pl and time-resolved photoluminescence show that this emission peak is associated with the recombination of exciton bound to mn-induced impurity bound states. it is found that rapid thermal annealing can induce reorganization of mn composition in alloys and significantly reduce the density of impurity induced by mn incorporation and improve the intrinsic interband transition. (c) 2002 elsevier science b.v. all rights reserved. |
| WOS关键词 | MOLECULAR-BEAM EPITAXY ; GAP |
| WOS研究方向 | Crystallography ; Materials Science ; Physics |
| WOS类目 | Crystallography ; Materials Science, Multidisciplinary ; Physics, Applied |
| 语种 | 英语 |
| WOS记录号 | WOS:000181089600023 |
| 出版者 | ELSEVIER SCIENCE BV |
| URI标识 | http://www.irgrid.ac.cn/handle/1471x/2429316 |
| 专题 | 半导体研究所 |
| 通讯作者 | Lu, SL |
| 作者单位 | 1.Chinese Acad Sci, Inst Semicond, State Key Lab Superlattices & Microstruct, Beijing 100083, Peoples R China 2.Hong Kong Univ Sci & Technol, Dept Phys, Hong Kong, Hong Kong, Peoples R China 3.Chinese Acad Sci, Changchum Inst Opt Fine Mech & Phys, Lab Excited State Proc, Jilin, Peoples R China |
| 推荐引用方式 GB/T 7714 | Lu, SL,Wang, JN,Huang, JS,et al. The effects of rapid thermal annealing on the optical properties of zn1-xmnxse epilayer grown by mocvd on gaas substrate[J]. Journal of crystal growth,2003,249(3-4):538-543. |
| APA | Lu, SL.,Wang, JN.,Huang, JS.,Bian, LF.,Jiang, DS.,...&Shen, DZ.(2003).The effects of rapid thermal annealing on the optical properties of zn1-xmnxse epilayer grown by mocvd on gaas substrate.Journal of crystal growth,249(3-4),538-543. |
| MLA | Lu, SL,et al."The effects of rapid thermal annealing on the optical properties of zn1-xmnxse epilayer grown by mocvd on gaas substrate".Journal of crystal growth 249.3-4(2003):538-543. |
入库方式： iSwitch采集
来源：半导体研究所
浏览0
下载0
收藏0
其他版本
除非特别说明，本系统中所有内容都受版权保护，并保留所有权利。