A study of the growth and optical properties of alingan alloys
文献类型：期刊论文
| 作者 | Huang, JS; Dong, X; Lu, XL; Xu, ZY; Ge, WK |
| 刊名 | Acta physica sinica
 |
| 出版日期 | 2003-10-01 |
| 卷号 | 52期号:10页码:2632-2637 |
| 关键词 | Alingan Mocvd Localized exitons Quantum dots |
| ISSN号 | 1000-3290 |
| 通讯作者 | Huang, js() |
| 英文摘要 | We have studied the growth and optical properties of alingan alloys in this article. by the measurement of three samples, we found that the incorporation of in decreases with the increase of temperature, while there is nearly no change for the incorporation of al. the sample grown at the lowest temperature had the best material and optical properties, which owes to the high in component, because the in component can reduce defects and improve the material quality. we also used the time-resolved photoluminescence(pl) to study the mechanism of recombination of carriers, and found that the time dependence of pl intensity was not in exponential decay, but in stretched-exponential decay. through the study of the character of this decay, we come to the conclusion that the emission comes from the recombination of localized excitons. once more, this localization exhibites the character of quantum dots, and the stretched, exponential decay results from the hopping of carriers between different localized states. in addition, we have used the relation of emission energy dependence of carrier's lifetime and the character of radiative recombination and non-radiative combination to confirm our conclusion. |
| WOS关键词 | TIME-RESOLVED PHOTOLUMINESCENCE ; MULTIPLE-QUANTUM WELLS ; LUMINESCENCE ; RELAXATION ; SILICON ; GAN |
| WOS研究方向 | Physics |
| WOS类目 | Physics, Multidisciplinary |
| 语种 | 英语 |
| WOS记录号 | WOS:000185683100051 |
| 出版者 | CHINESE PHYSICAL SOC |
| URI标识 | http://www.irgrid.ac.cn/handle/1471x/2429319 |
| 专题 | 半导体研究所 |
| 通讯作者 | Huang, JS |
| 作者单位 | 1.Chinese Acad Sci, Inst Semicond, Beijing 100083, Peoples R China 2.Hong Kong Univ Sci & Technol, Dept Phys, Hong Kong, Hong Kong, Peoples R China |
| 推荐引用方式 GB/T 7714 | Huang, JS,Dong, X,Lu, XL,et al. A study of the growth and optical properties of alingan alloys[J]. Acta physica sinica,2003,52(10):2632-2637. |
| APA | Huang, JS,Dong, X,Lu, XL,Xu, ZY,&Ge, WK.(2003).A study of the growth and optical properties of alingan alloys.Acta physica sinica,52(10),2632-2637. |
| MLA | Huang, JS,et al."A study of the growth and optical properties of alingan alloys".Acta physica sinica 52.10(2003):2632-2637. |
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来源：半导体研究所
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