中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
Magnetic-field-induced nonthermal occupation of higher subbands in a three-barrier tunneling structure

文献类型:期刊论文

作者An, L; Tang, Y; Zhang, JD; Ji, Y; Tan, PH; Yang, FH; Zhaeng, HZ
刊名Spectroscopy and spectral analysis
出版日期2003-06-01
卷号23期号:3页码:470-473
关键词Resonance tunneling Nonthermal occupation Intersubband relaxation
ISSN号1000-0593
通讯作者An, l()
英文摘要When injected electrons in a quantum well first experience an intersubband relaxation process before their escaping by tunneling through a double-barrier structure behind, the magnetic suppression of intersubband lo or la phonon scattering can give rise to a noticeable nonthermal occupation in higher-lying subbands. that is clearly verified by the relative intensity ratio of the interband photoluminescence spectra for e-2-hh1 and e-1-hh1 transitions. the observed phenomenon may provide an effective method for controlling intersubband scattering rate, a central issue in so-called quantum cascade lasers, and facilitating the population inversion between subbands in quantum wells.
WOS关键词QUANTUM-WELLS ; SEMICONDUCTOR SUPERLATTICES ; POPULATION-INVERSION ; ELECTRON ; EMISSION ; LASER
WOS研究方向Spectroscopy
WOS类目Spectroscopy
语种英语
WOS记录号WOS:000183917000014
出版者BEIJING UNIV PRESS
URI标识http://www.irgrid.ac.cn/handle/1471x/2429320
专题半导体研究所
通讯作者An, L
作者单位Chinese Acad Sci, Inst Semicond, Natl Lab Superlattices & Microstruct, Beijing 100083, Peoples R China
推荐引用方式
GB/T 7714
An, L,Tang, Y,Zhang, JD,et al. Magnetic-field-induced nonthermal occupation of higher subbands in a three-barrier tunneling structure[J]. Spectroscopy and spectral analysis,2003,23(3):470-473.
APA An, L.,Tang, Y.,Zhang, JD.,Ji, Y.,Tan, PH.,...&Zhaeng, HZ.(2003).Magnetic-field-induced nonthermal occupation of higher subbands in a three-barrier tunneling structure.Spectroscopy and spectral analysis,23(3),470-473.
MLA An, L,et al."Magnetic-field-induced nonthermal occupation of higher subbands in a three-barrier tunneling structure".Spectroscopy and spectral analysis 23.3(2003):470-473.

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来源:半导体研究所

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