Large excitation-power dependence of pressure coefficients of inxga1-xn/inyga1-yn quantum wells
文献类型：期刊论文
| 作者 | Li, Q; Fang, ZL; Xu, SJ; Li, GH; Xie, MH; Tong, SY; Zhang, XH; Liu, W; Chua, SJ |
| 刊名 | Physica status solidi b-basic research
 |
| 出版日期 | 2003-02-01 |
| 卷号 | 235期号:2页码:427-431 |
| ISSN号 | 0370-1972 |
| DOI | 10.1002/pssb.200301596 |
| 通讯作者 | Xu, sj() |
| 英文摘要 | Excitation-power dependence of hydrostatic pressure coefficients (de/dp) of inxga1-xn/inyga1-yn multiple quantum wells is reported. when the excitation power increases from 1.0 to 33 mw, de/dp increases from 26.9 to 33.8 mev/gpa, which is an increase by 25%. a saturation behavior of de/dp with the excitation power is observed. the increment of de/dp with increasing carrier density is explained by an reduction of the internal piezoelectric field due to an efficient screening effect of the free carriers on the field. |
| WOS关键词 | PIEZOELECTRIC FIELD ; PHOTOLUMINESCENCE ; TEMPERATURE |
| WOS研究方向 | Physics |
| WOS类目 | Physics, Condensed Matter |
| 语种 | 英语 |
| WOS记录号 | WOS:000181009000039 |
| 出版者 | WILEY-V C H VERLAG GMBH |
| URI标识 | http://www.irgrid.ac.cn/handle/1471x/2429322 |
| 专题 | 半导体研究所 |
| 通讯作者 | Xu, SJ |
| 作者单位 | 1.Univ Hong Kong, Dept Phys, Hong Kong, Hong Kong, Peoples R China 2.Univ Hong Kong, HKU CAS Joint Lab New Mat, Hong Kong, Hong Kong, Peoples R China 3.Chinese Acad Sci, Inst Semicond, Natl Lab Supperlattices & Microstruct, Beijing 100083, Peoples R China 4.City Univ Hong Kong, Dept Phys & Mat Sci, Kowloon, Hong Kong, Peoples R China 5.Inst Mat Res & Engn, Singapore 117602, Singapore |
| 推荐引用方式 GB/T 7714 | Li, Q,Fang, ZL,Xu, SJ,et al. Large excitation-power dependence of pressure coefficients of inxga1-xn/inyga1-yn quantum wells[J]. Physica status solidi b-basic research,2003,235(2):427-431. |
| APA | Li, Q.,Fang, ZL.,Xu, SJ.,Li, GH.,Xie, MH.,...&Chua, SJ.(2003).Large excitation-power dependence of pressure coefficients of inxga1-xn/inyga1-yn quantum wells.Physica status solidi b-basic research,235(2),427-431. |
| MLA | Li, Q,et al."Large excitation-power dependence of pressure coefficients of inxga1-xn/inyga1-yn quantum wells".Physica status solidi b-basic research 235.2(2003):427-431. |
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来源：半导体研究所
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