A method to obtain ground state electroluminescence from 1.3 mu m emitting inas/gaas quantum dots grown by molecular beam epitaxy
文献类型:期刊论文
作者 | Kong, YC; Zhou, DY; Lan, Q; Liu, JL; Miao, ZH; Feng, SL; Niu, ZC |
刊名 | Chinese physics
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出版日期 | 2003 |
卷号 | 12期号:1页码:97-99 |
关键词 | Quantum dots Electroluminescence State filling effect |
ISSN号 | 1009-1963 |
通讯作者 | Kong, yc() |
英文摘要 | 1.3 mum emitting inas/gaas quantum dots (qds) have been grown by molecular beam epitaxy and qd light emitting diodes (leds) have been fabricated. in the electroluminescence spectra of qd leds, two clear peaks corresponding to the ground state emission and the excited state emission are observed. it was found that the ground state emission could be achieved by increasing the number of qds contained in the active region because of the state filling effect. this work demonstrates a way to control and tune the emitting wavelength of qd leds and lasers. |
WOS关键词 | OPTICAL-PROPERTIES ; WAVELENGTH ; EMISSION ; LASER ; GAAS ; DEPENDENCE ; LAYER |
WOS研究方向 | Physics |
WOS类目 | Physics, Multidisciplinary |
语种 | 英语 |
WOS记录号 | WOS:000181024500018 |
出版者 | CHINESE PHYSICAL SOC |
URI标识 | http://www.irgrid.ac.cn/handle/1471x/2429324 |
专题 | 半导体研究所 |
通讯作者 | Kong, YC |
作者单位 | Chinese Acad Sci, Inst Semicond, State Key Lab Superlattices & Micostruct, Beijing 100083, Peoples R China |
推荐引用方式 GB/T 7714 | Kong, YC,Zhou, DY,Lan, Q,et al. A method to obtain ground state electroluminescence from 1.3 mu m emitting inas/gaas quantum dots grown by molecular beam epitaxy[J]. Chinese physics,2003,12(1):97-99. |
APA | Kong, YC.,Zhou, DY.,Lan, Q.,Liu, JL.,Miao, ZH.,...&Niu, ZC.(2003).A method to obtain ground state electroluminescence from 1.3 mu m emitting inas/gaas quantum dots grown by molecular beam epitaxy.Chinese physics,12(1),97-99. |
MLA | Kong, YC,et al."A method to obtain ground state electroluminescence from 1.3 mu m emitting inas/gaas quantum dots grown by molecular beam epitaxy".Chinese physics 12.1(2003):97-99. |
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来源:半导体研究所
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