Silicon doping induced increment of quantum dot density
文献类型：期刊论文
| 作者 | Duan, RF; Wang, BQ; Zhu, ZP; Zeng, Y |
| 刊名 | Japanese journal of applied physics part 1-regular papers short notes & review papers
 |
| 出版日期 | 2003-10-01 |
| 卷号 | 42期号:10页码:6314-6318 |
| 关键词 | Mbe Silicon Doping Density Ingaas/gaas Saod |
| ISSN号 | 0021-4922 |
| DOI | 10.1143/jjap.42.6314 |
| 通讯作者 | Duan, rf() |
| 英文摘要 | Low-indium-content self-assembled ingaas/gaas quantum dots (saqd) were grown using solid-source molecular beam epitaxy (mbe) and investigated by atomic force microscopy and photoluminescence (pl) spectroscopy. silicon, which was doped at different quantum dot (qd) growth stages, markedly increased the density of qd. we obtained high density in0.35ga0.65as/gaas(001) quantum dots of 10(11)/cm(2) at a growth temperature of 520degreesc. pl spectra and distribution statistics show the high quality and uniformity of our silicon-doped samples. the density increment can be explained using the lattice-hardening mechanism due to silicon doping. |
| WOS关键词 | INGAAS ; ISLANDS ; GAAS |
| WOS研究方向 | Physics |
| WOS类目 | Physics, Applied |
| 语种 | 英语 |
| WOS记录号 | WOS:000186948400014 |
| 出版者 | INST PURE APPLIED PHYSICS |
| URI标识 | http://www.irgrid.ac.cn/handle/1471x/2429327 |
| 专题 | 半导体研究所 |
| 通讯作者 | Duan, RF |
| 作者单位 | Chinese Acad Sci, Inst Semicond, Novel Mat Dept, Beijing 100083, Peoples R China |
| 推荐引用方式 GB/T 7714 | Duan, RF,Wang, BQ,Zhu, ZP,et al. Silicon doping induced increment of quantum dot density[J]. Japanese journal of applied physics part 1-regular papers short notes & review papers,2003,42(10):6314-6318. |
| APA | Duan, RF,Wang, BQ,Zhu, ZP,&Zeng, Y.(2003).Silicon doping induced increment of quantum dot density.Japanese journal of applied physics part 1-regular papers short notes & review papers,42(10),6314-6318. |
| MLA | Duan, RF,et al."Silicon doping induced increment of quantum dot density".Japanese journal of applied physics part 1-regular papers short notes & review papers 42.10(2003):6314-6318. |
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来源：半导体研究所
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