Effects and numerical analysis of argon gas flow on the oxygen concentration in czochralski silicon single crystal growth
文献类型：期刊论文
| 作者 | Zhang, ZC; Ren, BY; Chen, YH; Yang, SY; Wang, ZG |
| 刊名 | Microelectronic engineering
 |
| 出版日期 | 2003-04-01 |
| 卷号 | 66期号:1-4页码:504-509 |
| 关键词 | Czochralski method Growth from melt Semiconductor silicon Argon gas flow Computer simulation Oxygen content |
| ISSN号 | 0167-9317 |
| DOI | 10.1016/s0167-9317(02)00927-9 |
| 通讯作者 | Zhang, zc() |
| 英文摘要 | Argon gas, as a protective environment and carrier of latent heat, has an important effect on the temperature distribution in crystals and melts. numeric simulation is a potent tool for solving engineering problems. in this paper, the relationship between argon gas flow and oxygen concentration in silicon crystals was studied systematically. a flowing stream of argon gas is described by numeric simulation for the first time. therefore, the results of experiments can be explained, and the optimum argon flow with the lowest oxygen concentration can be achieved. (c) 2002 elsevier science b.v. all rights reserved. |
| WOS关键词 | FURNACE PRESSURE |
| WOS研究方向 | Engineering ; Science & Technology - Other Topics ; Optics ; Physics |
| WOS类目 | Engineering, Electrical & Electronic ; Nanoscience & Nanotechnology ; Optics ; Physics, Applied |
| 语种 | 英语 |
| WOS记录号 | WOS:000182725500073 |
| 出版者 | ELSEVIER SCIENCE BV |
| URI标识 | http://www.irgrid.ac.cn/handle/1471x/2429334 |
| 专题 | 半导体研究所 |
| 通讯作者 | Zhang, ZC |
| 作者单位 | 1.Chinese Acad Sci, Inst Semicond, Lab Semicond Mat Sci, Beijing 100083, Peoples R China 2.Hebei Univ Technol, Inst Semicond, Tianjin 300130, Peoples R China |
| 推荐引用方式 GB/T 7714 | Zhang, ZC,Ren, BY,Chen, YH,et al. Effects and numerical analysis of argon gas flow on the oxygen concentration in czochralski silicon single crystal growth[J]. Microelectronic engineering,2003,66(1-4):504-509. |
| APA | Zhang, ZC,Ren, BY,Chen, YH,Yang, SY,&Wang, ZG.(2003).Effects and numerical analysis of argon gas flow on the oxygen concentration in czochralski silicon single crystal growth.Microelectronic engineering,66(1-4),504-509. |
| MLA | Zhang, ZC,et al."Effects and numerical analysis of argon gas flow on the oxygen concentration in czochralski silicon single crystal growth".Microelectronic engineering 66.1-4(2003):504-509. |
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来源：半导体研究所
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