In0.25ga0.75as growth on low-temperature thin buffer layers formed on gaas (001) substrate
文献类型：期刊论文
| 作者 | Zhang, ZC; Yang, SY; Zhang, FQ; Xu, B; Zeng, YP; Chen, YH; Wang, ZG |
| 刊名 | Journal of crystal growth
 |
| 出版日期 | 2003 |
| 卷号 | 247期号:1-2页码:126-130 |
| 关键词 | Dislocation Interfaces Strain Molecular beam epitaxy Semiconductor iiiv materials |
| ISSN号 | 0022-0248 |
| 通讯作者 | Zhang, zc() |
| 英文摘要 | High-quality in0.25ga0.75as films were grown on low-temperature (lt) ultra-thin gaas buffer layers formed on gaas (0 0 1) substrate by molecular beam epitaxy. the epilayers were studied by atomic force microscopy (afm), photo luminescence (pl) and double crystal x-ray diffraction (dcxrd), all the measurements indicated that lt thin buffer layer technique is a simple but powerful growth technique for heteroepitaxy. (c) 2002 elsevier science b.v. all rights reserved. |
| WOS关键词 | MOLECULAR-BEAM EPITAXY ; SURFACE-MORPHOLOGY ; TECHNOLOGY ; GAAS(001) ; BEHAVIOR ; SI |
| WOS研究方向 | Crystallography ; Materials Science ; Physics |
| WOS类目 | Crystallography ; Materials Science, Multidisciplinary ; Physics, Applied |
| 语种 | 英语 |
| WOS记录号 | WOS:000180078300019 |
| 出版者 | ELSEVIER SCIENCE BV |
| URI标识 | http://www.irgrid.ac.cn/handle/1471x/2429340 |
| 专题 | 半导体研究所 |
| 通讯作者 | Zhang, ZC |
| 作者单位 | Chinese Acad Sci, Inst Semicond, Lab Semicond Mat Sci, Beijing 100083, Peoples R China |
| 推荐引用方式 GB/T 7714 | Zhang, ZC,Yang, SY,Zhang, FQ,et al. In0.25ga0.75as growth on low-temperature thin buffer layers formed on gaas (001) substrate[J]. Journal of crystal growth,2003,247(1-2):126-130. |
| APA | Zhang, ZC.,Yang, SY.,Zhang, FQ.,Xu, B.,Zeng, YP.,...&Wang, ZG.(2003).In0.25ga0.75as growth on low-temperature thin buffer layers formed on gaas (001) substrate.Journal of crystal growth,247(1-2),126-130. |
| MLA | Zhang, ZC,et al."In0.25ga0.75as growth on low-temperature thin buffer layers formed on gaas (001) substrate".Journal of crystal growth 247.1-2(2003):126-130. |
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来源：半导体研究所
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