Spin-polarized current produced by a double barrier resonant tunneling diode
文献类型：期刊论文
| 作者 | Xia, JB; Hai, GQ; Wang, JN |
| 刊名 | Solid state communications
 |
| 出版日期 | 2003-08-01 |
| 卷号 | 127期号:7页码:489-492 |
| 关键词 | Semiconductor Semimagnetic Spin Tunneling |
| ISSN号 | 0038-1098 |
| DOI | 10.1016/s0038-1098(03)00451-4 |
| 通讯作者 | Hai, gq() |
| 英文摘要 | The spin-polarized tunneling current through a double barrier resonant tunneling diode (rtd) made with a semimagnetic semiconductor is studied theoretically. the calculated spin-polarized current and polarization degree are in agreement with recent experimental results. it is predicted that the polarization degree can be modulated continuously from + 1 to - 1 by changing the external voltage such that the quasi-confined spin-up and spin-down energy levels shift downwards from the fermi level to the bottom of the conduction band. the rtd with low potential barrier or the tunneling through the second quasi-confined state produces larger spin-polarized current. furthermore a higher magnetic field enhances the polarization degree of the tunneling current. (c) 2003 elsevier ltd. all rights reserved. |
| WOS关键词 | SEMICONDUCTOR HETEROSTRUCTURE ; INJECTION |
| WOS研究方向 | Physics |
| WOS类目 | Physics, Condensed Matter |
| 语种 | 英语 |
| WOS记录号 | WOS:000184990100005 |
| 出版者 | PERGAMON-ELSEVIER SCIENCE LTD |
| URI标识 | http://www.irgrid.ac.cn/handle/1471x/2429348 |
| 专题 | 半导体研究所 |
| 通讯作者 | Hai, GQ |
| 作者单位 | 1.Univ Sao Paulo, Inst Fis Sao Carlos, BR-13560970 Sao Carlos, SP, Brazil 2.Chinese Acad Sci, Inst Semicond, Beijing 100083, Peoples R China 3.Hong Kong Univ Sci & Technol, Dept Phys, Kowloon, Hong Kong, Peoples R China |
| 推荐引用方式 GB/T 7714 | Xia, JB,Hai, GQ,Wang, JN. Spin-polarized current produced by a double barrier resonant tunneling diode[J]. Solid state communications,2003,127(7):489-492. |
| APA | Xia, JB,Hai, GQ,&Wang, JN.(2003).Spin-polarized current produced by a double barrier resonant tunneling diode.Solid state communications,127(7),489-492. |
| MLA | Xia, JB,et al."Spin-polarized current produced by a double barrier resonant tunneling diode".Solid state communications 127.7(2003):489-492. |
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来源：半导体研究所
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