中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
Structure characteristics of ingan quantum dots fabricated by passivation and low temperature method

文献类型:期刊论文

作者Qu, BZ; Chen, Z; Lu, DC; Han, P; Liu, XG; Wang, XH; Wang, D; Zhu, QS; Wang, ZG
刊名Journal of crystal growth
出版日期2003-05-01
卷号252期号:1-3页码:19-25
关键词Nanostructures Metalorganic chemical vapor deposition Nitrides
ISSN号0022-0248
DOI10.1016/s0022-0248(02)02486-7
通讯作者Qu, bz()
英文摘要Passivation and low temperature method was carried out to grow ingan/gan quantum dots (qds). atomic force microscope observations were performed to investigate the evolution of the surface morphology of the ingan qds superlattices with increasing the superlattices layer number. the result shows that the size of the qds increases with increasing superlattices layer number. the qds height and diameter increase from 18 and 50 run for the monolayer ingan qds to 37 and 80 urn for the four-stacked ingan qds layers, respectively. this result is considered to be due to the stress field from the sub-layer dots. (c) 2003 elsevier science b.v. all rights reserved.
WOS关键词CHEMICAL-VAPOR-DEPOSITION ; MOLECULAR-BEAM EPITAXY ; SIZE DISTRIBUTION ; GROWTH ; GAAS ; DEPENDENCE ; EMISSION ; NUMBER
WOS研究方向Crystallography ; Materials Science ; Physics
WOS类目Crystallography ; Materials Science, Multidisciplinary ; Physics, Applied
语种英语
WOS记录号WOS:000182145400005
出版者ELSEVIER SCIENCE BV
URI标识http://www.irgrid.ac.cn/handle/1471x/2429354
专题半导体研究所
通讯作者Qu, BZ
作者单位Acad Sinica, Inst Semicond, Lab Semicond Mat Sci, Beijing 100083, Peoples R China
推荐引用方式
GB/T 7714
Qu, BZ,Chen, Z,Lu, DC,et al. Structure characteristics of ingan quantum dots fabricated by passivation and low temperature method[J]. Journal of crystal growth,2003,252(1-3):19-25.
APA Qu, BZ.,Chen, Z.,Lu, DC.,Han, P.,Liu, XG.,...&Wang, ZG.(2003).Structure characteristics of ingan quantum dots fabricated by passivation and low temperature method.Journal of crystal growth,252(1-3),19-25.
MLA Qu, BZ,et al."Structure characteristics of ingan quantum dots fabricated by passivation and low temperature method".Journal of crystal growth 252.1-3(2003):19-25.

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来源:半导体研究所

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