Structure characteristics of ingan quantum dots fabricated by passivation and low temperature method
文献类型：期刊论文
| 作者 | Qu, BZ; Chen, Z; Lu, DC; Han, P; Liu, XG; Wang, XH; Wang, D; Zhu, QS; Wang, ZG |
| 刊名 | Journal of crystal growth
 |
| 出版日期 | 2003-05-01 |
| 卷号 | 252期号:1-3页码:19-25 |
| 关键词 | Nanostructures Metalorganic chemical vapor deposition Nitrides |
| ISSN号 | 0022-0248 |
| DOI | 10.1016/s0022-0248(02)02486-7 |
| 通讯作者 | Qu, bz() |
| 英文摘要 | Passivation and low temperature method was carried out to grow ingan/gan quantum dots (qds). atomic force microscope observations were performed to investigate the evolution of the surface morphology of the ingan qds superlattices with increasing the superlattices layer number. the result shows that the size of the qds increases with increasing superlattices layer number. the qds height and diameter increase from 18 and 50 run for the monolayer ingan qds to 37 and 80 urn for the four-stacked ingan qds layers, respectively. this result is considered to be due to the stress field from the sub-layer dots. (c) 2003 elsevier science b.v. all rights reserved. |
| WOS关键词 | CHEMICAL-VAPOR-DEPOSITION ; MOLECULAR-BEAM EPITAXY ; SIZE DISTRIBUTION ; GROWTH ; GAAS ; DEPENDENCE ; EMISSION ; NUMBER |
| WOS研究方向 | Crystallography ; Materials Science ; Physics |
| WOS类目 | Crystallography ; Materials Science, Multidisciplinary ; Physics, Applied |
| 语种 | 英语 |
| WOS记录号 | WOS:000182145400005 |
| 出版者 | ELSEVIER SCIENCE BV |
| URI标识 | http://www.irgrid.ac.cn/handle/1471x/2429354 |
| 专题 | 半导体研究所 |
| 通讯作者 | Qu, BZ |
| 作者单位 | Acad Sinica, Inst Semicond, Lab Semicond Mat Sci, Beijing 100083, Peoples R China |
| 推荐引用方式 GB/T 7714 | Qu, BZ,Chen, Z,Lu, DC,et al. Structure characteristics of ingan quantum dots fabricated by passivation and low temperature method[J]. Journal of crystal growth,2003,252(1-3):19-25. |
| APA | Qu, BZ.,Chen, Z.,Lu, DC.,Han, P.,Liu, XG.,...&Wang, ZG.(2003).Structure characteristics of ingan quantum dots fabricated by passivation and low temperature method.Journal of crystal growth,252(1-3),19-25. |
| MLA | Qu, BZ,et al."Structure characteristics of ingan quantum dots fabricated by passivation and low temperature method".Journal of crystal growth 252.1-3(2003):19-25. |
入库方式： iSwitch采集
来源：半导体研究所
浏览0
下载0
收藏0
其他版本
除非特别说明，本系统中所有内容都受版权保护，并保留所有权利。