Magnetic properties and rectifying behaviour of silicon doped with gadolinium
文献类型：期刊论文
| 作者 | Zhou, JP; Chen, NF; Song, SL; Chai, CL; Yang, SY; Liu, ZK; Lin, LY |
| 刊名 | Acta physica sinica
 |
| 出版日期 | 2003-06-01 |
| 卷号 | 52期号:6页码:1469-1473 |
| 关键词 | Magnetic semiconductor Magnetic p-n junction Ion beam epitaxy Gadolinium silicides |
| ISSN号 | 1000-3290 |
| 通讯作者 | Zhou, jp() |
| 英文摘要 | The magnetic/nonmagnetic p-n junction was prepared by implanting gadolinium into the n-type silicon with low-energy dual-ion-beam epitaxy technology. the magnetic layer gdxsi1-x shows excellent magnetic properties at room temperature. high magnetic moment 10mu(b) per gd atom is observed, which is interpreted by rkky mechanism. magnetic/nonmagnetic p-n junctions show rectifying behaviour, but no magnetoresistance is observed. |
| WOS关键词 | METAL-INSULATOR-TRANSITION ; P-N-JUNCTION ; INDUCED FERROMAGNETISM ; SI/SIER INTERFACE ; BEAM EPITAXY ; SEMICONDUCTORS ; EXCITATION ; MAGNETORESISTANCE ; ALLOYS |
| WOS研究方向 | Physics |
| WOS类目 | Physics, Multidisciplinary |
| 语种 | 英语 |
| WOS记录号 | WOS:000183472500030 |
| 出版者 | CHINESE PHYSICAL SOC |
| URI标识 | http://www.irgrid.ac.cn/handle/1471x/2429355 |
| 专题 | 半导体研究所 |
| 通讯作者 | Zhou, JP |
| 作者单位 | Chinese Acad Sci, Inst Semicond, Lab Semicond Mat Sci, Beijing 100083, Peoples R China |
| 推荐引用方式 GB/T 7714 | Zhou, JP,Chen, NF,Song, SL,et al. Magnetic properties and rectifying behaviour of silicon doped with gadolinium[J]. Acta physica sinica,2003,52(6):1469-1473. |
| APA | Zhou, JP.,Chen, NF.,Song, SL.,Chai, CL.,Yang, SY.,...&Lin, LY.(2003).Magnetic properties and rectifying behaviour of silicon doped with gadolinium.Acta physica sinica,52(6),1469-1473. |
| MLA | Zhou, JP,et al."Magnetic properties and rectifying behaviour of silicon doped with gadolinium".Acta physica sinica 52.6(2003):1469-1473. |
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来源：半导体研究所
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