Formation of self-assembly and the mechanism of si nanoquantum dots prepared by low pressure chemical vapor deposition
文献类型：期刊论文
| 作者 | Peng, YC; Ikeda, M; Miyazaki, S |
| 刊名 | Acta physica sinica
 |
| 出版日期 | 2003-12-01 |
| 卷号 | 52期号:12页码:3108-3113 |
| 关键词 | Si nanoquanturn dots Lpcvd Self-assembed formation Growth mechanism |
| ISSN号 | 1000-3290 |
| 通讯作者 | Peng, yc() |
| 英文摘要 | Si nanoquantum dots have been formed by self-assembled growth on the both si-o-si and si-oh bonds terminated sio2 surfaces using the low-pressure chemical vapor deposition (lpcvd) and surface thermal decomposition of pure sih4 gas. we have experimentally studied the variation of si. dot density with si-oh bonds density, deposition temperature and sih4 pressure, and analyzed qualitatively the formation mechanism of the si nanoquantum dots based on lpcvd surface thermal dynamics principle. the results are very. important for the control of the density and size of si nanoquantum dots, and have potential applications in the new quantum devices. |
| WOS关键词 | SILICON QUANTUM DOTS ; PHOTOLUMINESCENCE |
| WOS研究方向 | Physics |
| WOS类目 | Physics, Multidisciplinary |
| 语种 | 英语 |
| WOS记录号 | WOS:000187556200030 |
| 出版者 | CHINESE PHYSICAL SOC |
| URI标识 | http://www.irgrid.ac.cn/handle/1471x/2429356 |
| 专题 | 半导体研究所 |
| 通讯作者 | Peng, YC |
| 作者单位 | 1.Hebei Univ, Coll Elect & Informat Engn, Baoding 071002, Peoples R China 2.Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, Beijing 100083, Peoples R China 3.Hiroshima Univ, Grad Sch Adv Sci Matter, Dept Elect Engn, Hiroshima, Japan |
| 推荐引用方式 GB/T 7714 | Peng, YC,Ikeda, M,Miyazaki, S. Formation of self-assembly and the mechanism of si nanoquantum dots prepared by low pressure chemical vapor deposition[J]. Acta physica sinica,2003,52(12):3108-3113. |
| APA | Peng, YC,Ikeda, M,&Miyazaki, S.(2003).Formation of self-assembly and the mechanism of si nanoquantum dots prepared by low pressure chemical vapor deposition.Acta physica sinica,52(12),3108-3113. |
| MLA | Peng, YC,et al."Formation of self-assembly and the mechanism of si nanoquantum dots prepared by low pressure chemical vapor deposition".Acta physica sinica 52.12(2003):3108-3113. |
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来源：半导体研究所
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