Structure and luminescence of gan films by sputtering post-annealing-reaction technique
文献类型：期刊论文
| 作者 | Ma, HL; Yang, YG; Xue, CS; Zhuang, HZ; Hao, XT; Ma, J |
| 刊名 | Diamond and related materials
 |
| 出版日期 | 2003-08-01 |
| 卷号 | 12期号:8页码:1402-1405 |
| 关键词 | Gan films Quartz substrates Photoluminescence Sputtering post-annealing-reaction technique |
| ISSN号 | 0925-9635 |
| 通讯作者 | Yang, yg() |
| 英文摘要 | Gallium nitride (gan) films were prepared on quartz substrates by sputtering post-annealing-reaction technique. the sputtered ga2o3 films were used as a precursor for gan growth. x-ray diffractometer, x-ray photoelectron spectroscopy and tem measurement results indicate that the obtained gan films are polycrystalline films with hexagonal structure, which consist of single-crystalline nanorods. a strong blue photoluminescence located at 458 nm and a uv photoluminescence located at 370 nm is observed at room temperature. (c) 2003 elsevier science b.v. all rights reserved. |
| WOS关键词 | GALLIUM NITRIDE ; LOW-TEMPERATURE ; GROWTH ; GAAS |
| WOS研究方向 | Materials Science |
| WOS类目 | Materials Science, Multidisciplinary |
| 语种 | 英语 |
| WOS记录号 | WOS:000184315100020 |
| 出版者 | ELSEVIER SCIENCE SA |
| URI标识 | http://www.irgrid.ac.cn/handle/1471x/2429358 |
| 专题 | 半导体研究所 |
| 通讯作者 | Yang, YG |
| 作者单位 | 1.Shandong Univ, Sch Phys & Microelect, Jinan 250100, Peoples R China 2.Shandong Normal Univ, Inst Semicond, Jinan 250014, Peoples R China |
| 推荐引用方式 GB/T 7714 | Ma, HL,Yang, YG,Xue, CS,et al. Structure and luminescence of gan films by sputtering post-annealing-reaction technique[J]. Diamond and related materials,2003,12(8):1402-1405. |
| APA | Ma, HL,Yang, YG,Xue, CS,Zhuang, HZ,Hao, XT,&Ma, J.(2003).Structure and luminescence of gan films by sputtering post-annealing-reaction technique.Diamond and related materials,12(8),1402-1405. |
| MLA | Ma, HL,et al."Structure and luminescence of gan films by sputtering post-annealing-reaction technique".Diamond and related materials 12.8(2003):1402-1405. |
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来源：半导体研究所
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