Study on the reverse characteristics of ti/6h-sic schottky contacts
文献类型:期刊论文
作者 | Shang, YC; Liu, ZL; Wang, SR |
刊名 | Acta physica sinica
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出版日期 | 2003 |
卷号 | 52期号:1页码:211-216 |
关键词 | Sic Schottky contacts Reverse characteristics Tunneling current |
ISSN号 | 1000-3290 |
通讯作者 | Shang, yc() |
英文摘要 | The reverse i(v) measurement and analytic calculation of the electron transport across a ti/6h-sic schottky barrier are presented. based on the consideration of the barrier fluctuations and the barrier height shift caused by image charge and the applied voltage drop across ti/sic interfical layer, a comprehensive analytical model for the reverse tunneling current is developed using a wkb calculation of the tunneling probability through a reverse biased schottky barrier. this model takes into account the main reverse conduction mechanism, such as field emission, thermionic field emission and thermionic emission. the fact that the simulated results are in good agreement with the experimental data indicates that the barrier height shift and barrier fluctuation can lead to reverse current densities orders of magnitude higher than that obtained from a simple theory. it is shown that the field and thermionic field emission processes, in which carries can tunnel through the barrier but cannot surmount it with insufficient thermal energy, dominate the reverse characteristics of a sic schottky contacts in a normal working condition. |
WOS关键词 | ELECTRICAL CHARACTERISTICS ; INHOMOGENEITIES ; DIODES |
WOS研究方向 | Physics |
WOS类目 | Physics, Multidisciplinary |
语种 | 英语 |
WOS记录号 | WOS:000180915400039 |
出版者 | CHINESE PHYSICAL SOC |
URI标识 | http://www.irgrid.ac.cn/handle/1471x/2429363 |
专题 | 半导体研究所 |
通讯作者 | Shang, YC |
作者单位 | Chinese Acad Sci, Microelect R&D Ctr, Inst Semicond, Beijing 100083, Peoples R China |
推荐引用方式 GB/T 7714 | Shang, YC,Liu, ZL,Wang, SR. Study on the reverse characteristics of ti/6h-sic schottky contacts[J]. Acta physica sinica,2003,52(1):211-216. |
APA | Shang, YC,Liu, ZL,&Wang, SR.(2003).Study on the reverse characteristics of ti/6h-sic schottky contacts.Acta physica sinica,52(1),211-216. |
MLA | Shang, YC,et al."Study on the reverse characteristics of ti/6h-sic schottky contacts".Acta physica sinica 52.1(2003):211-216. |
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来源:半导体研究所
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