Epitaxial growth and characterization of sic on c-plane sapphire substrates by ammonia nitridation
文献类型：期刊论文
| 作者 | Luo, MC; Li, JM; Wang, QM; Sun, GS; Wang, L; Li, GR; Zeng, YP; Lin, LY |
| 刊名 | Journal of crystal growth
 |
| 出版日期 | 2003-02-01 |
| 卷号 | 249期号:1-2页码:1-8 |
| 关键词 | Infrared reflectivity Raman Sapphire substrate X-ray diffraction Chemical vapor deposition Sic |
| ISSN号 | 0022-0248 |
| 通讯作者 | Luo, mc() |
| 英文摘要 | The growth of sic epilayers on c-face (0 0 0 1) sapphire (alpha-al2o3) has been performed using cvd method. we found that the quality of sic epilayers has been improved through the nitridation of substrates by exposing them to ammonia ambient, as compared to growth on bare sapphire substrates. the single crystallinity of these layers was verified by xrd and double crystal xrd measurements. atomic force microscopy was used to evaluate the surface morphology. infrared reflectivity and raman scattering measurement were carried out to investigate the phonon modes in the grown sic. detailed raman analysis identified the 6h nature of the as-grown sic films. (c) 2002 elsevier science b.v. all rights reserved. |
| WOS关键词 | GAN ; FILMS |
| WOS研究方向 | Crystallography ; Materials Science ; Physics |
| WOS类目 | Crystallography ; Materials Science, Multidisciplinary ; Physics, Applied |
| 语种 | 英语 |
| WOS记录号 | WOS:000180474500001 |
| 出版者 | ELSEVIER SCIENCE BV |
| URI标识 | http://www.irgrid.ac.cn/handle/1471x/2429364 |
| 专题 | 半导体研究所 |
| 通讯作者 | Luo, MC |
| 作者单位 | 1.Chinese Acad Sci, Inst Semicond, Novel Semicond Mat Lab, Beijing 100083, Peoples R China 2.Beijing Polytech Univ, Numer Simulat Ctr Engn, Beijing 100022, Peoples R China 3.Chinese Acad Sci, Inst Semicond, Natl Lab Superlattices & Microstruct, Beijing 100083, Peoples R China |
| 推荐引用方式 GB/T 7714 | Luo, MC,Li, JM,Wang, QM,et al. Epitaxial growth and characterization of sic on c-plane sapphire substrates by ammonia nitridation[J]. Journal of crystal growth,2003,249(1-2):1-8. |
| APA | Luo, MC.,Li, JM.,Wang, QM.,Sun, GS.,Wang, L.,...&Lin, LY.(2003).Epitaxial growth and characterization of sic on c-plane sapphire substrates by ammonia nitridation.Journal of crystal growth,249(1-2),1-8. |
| MLA | Luo, MC,et al."Epitaxial growth and characterization of sic on c-plane sapphire substrates by ammonia nitridation".Journal of crystal growth 249.1-2(2003):1-8. |
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来源：半导体研究所
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