Localized exciton dynamics in alingan alloy
文献类型：期刊论文
| 作者 | Huang, JS; Dong, X; Luo, XD; Liu, XL; Xu, ZY; Ge, WK |
| 刊名 | Solid state communications
 |
| 出版日期 | 2003-05-01 |
| 卷号 | 126期号:8页码:473-477 |
| 关键词 | Alingan Quantum dots Hopping Stretched-exponential decay |
| ISSN号 | 0038-1098 |
| DOI | 10.1016/s0038-1098(03)00207-2 |
| 通讯作者 | Huang, js() |
| 英文摘要 | Carrier recombination dynamics in alingan alloy has been studied by photoluminescence (pl) and time-resolved pl (trpl) at various temperatures. the fast red-shift of pl peak energy is observed and well fitted by a physical model considering the thermal activation and transfer processes. this result provides evidence for the exciton localization in the quantum dot (qd)-like potentials in our alingan alloy. the trpl signals are found to be described by a stretched exponential function of exp[(-t/,tau)13], indicating the presence of a significant disorder in the material. the disorder is attributed to a randomly distributed qds or clusters caused by indium fluctuations. by studying the dependence of the dispersive exponent beta on temperature and emission energy, we suggest that the exciton hopping dominate the diffusion of carriers localized in the disordered qds. furthermore, the localized states are found to have 0d density of states up to 250 k, since the radiative lifetime remains almost unchanged with increasing temperature. (c) 2003 elsevier science ltd. all rights reserved. |
| WOS关键词 | MULTIPLE-QUANTUM WELLS ; LIGHT-EMITTING-DIODES ; TIME-RESOLVED PHOTOLUMINESCENCE ; CHEMICAL-VAPOR-DEPOSITION ; THERMAL-ACTIVATION ; LUMINESCENCE ; TRANSITIONS ; RELAXATION ; SILICON ; LAYERS |
| WOS研究方向 | Physics |
| WOS类目 | Physics, Condensed Matter |
| 语种 | 英语 |
| WOS记录号 | WOS:000182901400010 |
| 出版者 | PERGAMON-ELSEVIER SCIENCE LTD |
| URI标识 | http://www.irgrid.ac.cn/handle/1471x/2429368 |
| 专题 | 半导体研究所 |
| 通讯作者 | Huang, JS |
| 作者单位 | 1.Chinese Acad Sci, Inst Semicond, Beijing 100083, Peoples R China 2.Hong Kong Univ Sci & Technol, Dept Phys, Hong Kong, Hong Kong, Peoples R China |
| 推荐引用方式 GB/T 7714 | Huang, JS,Dong, X,Luo, XD,et al. Localized exciton dynamics in alingan alloy[J]. Solid state communications,2003,126(8):473-477. |
| APA | Huang, JS,Dong, X,Luo, XD,Liu, XL,Xu, ZY,&Ge, WK.(2003).Localized exciton dynamics in alingan alloy.Solid state communications,126(8),473-477. |
| MLA | Huang, JS,et al."Localized exciton dynamics in alingan alloy".Solid state communications 126.8(2003):473-477. |
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来源：半导体研究所
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