(ga,mn,n) compounds growth with mass-analyzed low energy dual ion beam deposition
文献类型：期刊论文
| 作者 | Zhang, FQ; Chen, NF; Liu, XG; Liu, ZK; Yang, SY; Cha, CL |
| 刊名 | Journal of crystal growth
 |
| 出版日期 | 2003-05-01 |
| 卷号 | 252期号:1-3页码:202-207 |
| 关键词 | X-ray diffraction Ion beam epitaxy Semiconducting iii-v materials |
| ISSN号 | 0022-0248 |
| DOI | 10.1016/s0022-0248(02)02515-0 |
| 通讯作者 | Zhang, fq() |
| 英文摘要 | The (ga,mn,n) samples were grown by the implantation of low-energy mn ions into gan/al2o3 substrate at different elevated substrate temperatures with mass-analyzed low-energy dual ion beam deposition system. auger electron spectroscopy depth profile of samples grown at different substrate temperatures indicates that the mn ions reach deeper in samples with higher substrate temperatures. clear x-ray diffraction peak from (ga,mn)n is observed in samples grown at the higher substrate temperature. it indicates that under optimized substrate temperature and annealing conditions the solid solution (ga,mn)n phase in samples was formed with the same lattice structure as gan and different lattice constant. (c) 2003 elsevier science b.v. all rights reserved. |
| WOS关键词 | DILUTED MAGNETIC SEMICONDUCTORS ; IMPLANTED GAN ; FERROMAGNETISM ; INJECTION ; GAAS ; MN |
| WOS研究方向 | Crystallography ; Materials Science ; Physics |
| WOS类目 | Crystallography ; Materials Science, Multidisciplinary ; Physics, Applied |
| 语种 | 英语 |
| WOS记录号 | WOS:000182145400030 |
| 出版者 | ELSEVIER SCIENCE BV |
| URI标识 | http://www.irgrid.ac.cn/handle/1471x/2429373 |
| 专题 | 半导体研究所 |
| 通讯作者 | Zhang, FQ |
| 作者单位 | 1.Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, Beijing 100083, Peoples R China 2.Chinese Acad Sci, Natl Micrograv Lab, Beijing 100864, Peoples R China |
| 推荐引用方式 GB/T 7714 | Zhang, FQ,Chen, NF,Liu, XG,et al. (ga,mn,n) compounds growth with mass-analyzed low energy dual ion beam deposition[J]. Journal of crystal growth,2003,252(1-3):202-207. |
| APA | Zhang, FQ,Chen, NF,Liu, XG,Liu, ZK,Yang, SY,&Cha, CL.(2003).(ga,mn,n) compounds growth with mass-analyzed low energy dual ion beam deposition.Journal of crystal growth,252(1-3),202-207. |
| MLA | Zhang, FQ,et al."(ga,mn,n) compounds growth with mass-analyzed low energy dual ion beam deposition".Journal of crystal growth 252.1-3(2003):202-207. |
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来源：半导体研究所
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