Atomic hydrogen induced step bunching and fabrication of quantum wire arrays on gaas (311)a substrate by molecular beam epitaxy
文献类型：期刊论文
| 作者 | Zhou, DY; Lan, Q; Kong, YC; Miao, ZH; Feng, SL; Niu, ZC |
| 刊名 | Chinese physics
 |
| 出版日期 | 2003-02-01 |
| 卷号 | 12期号:2页码:218-221 |
| 关键词 | Molecular beam epitaxy (mbe) step bunching Ingaas Quantum wire |
| ISSN号 | 1009-1963 |
| 通讯作者 | Zhou, dy() |
| 英文摘要 | Atomic hydrogen assisted molecular beam epitaxy (mbe) is a novel type of epitaxial growth of nanostructures. the gaas (311)a surface naturally forms one-dimensional step arrays by step bunching along the direction of (-233) and the space period is around 40nm. the step arrays extend over several mum without displacement. the ingaas quantum wire arrays are grown on the step arrays as the basis. our results may prompt further development of more uniform quantum wire and quantum dot arrays. |
| WOS关键词 | SURFACE-DIFFUSION ; GROWTH ; DOTS |
| WOS研究方向 | Physics |
| WOS类目 | Physics, Multidisciplinary |
| 语种 | 英语 |
| WOS记录号 | WOS:000181024600018 |
| 出版者 | CHINESE PHYSICAL SOC |
| URI标识 | http://www.irgrid.ac.cn/handle/1471x/2429374 |
| 专题 | 半导体研究所 |
| 通讯作者 | Zhou, DY |
| 作者单位 | Chinese Acad Sci, Inst Semicond, State Key Lab Superlattices & Microstruct, Beijing 100083, Peoples R China |
| 推荐引用方式 GB/T 7714 | Zhou, DY,Lan, Q,Kong, YC,et al. Atomic hydrogen induced step bunching and fabrication of quantum wire arrays on gaas (311)a substrate by molecular beam epitaxy[J]. Chinese physics,2003,12(2):218-221. |
| APA | Zhou, DY,Lan, Q,Kong, YC,Miao, ZH,Feng, SL,&Niu, ZC.(2003).Atomic hydrogen induced step bunching and fabrication of quantum wire arrays on gaas (311)a substrate by molecular beam epitaxy.Chinese physics,12(2),218-221. |
| MLA | Zhou, DY,et al."Atomic hydrogen induced step bunching and fabrication of quantum wire arrays on gaas (311)a substrate by molecular beam epitaxy".Chinese physics 12.2(2003):218-221. |
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来源：半导体研究所
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