Influence of level filling on optical properties of quantum well
文献类型：期刊论文
| 作者 | Zhu, L; Zheng, HZ; Tan, PH; Zhou, X; Ji, Y; Yang, FH; Li, GR; Zeng, YX |
| 刊名 | Acta physica sinica
 |
| 出版日期 | 2004-12-01 |
| 卷号 | 53期号:12页码:4334-4340 |
| 关键词 | Resonant tunneling Photoluminescence Quantum confinement stark effect Excess electron |
| ISSN号 | 1000-3290 |
| 通讯作者 | Zhu, l(zl_pin@sohu.com) |
| 英文摘要 | In a specially- designed three-barrier-double-well tunneling structure, electron injecting from the emitter in combination with escaping through a resonant-tunneling structure were used to adjust and control the filling of electrons in different subbands. it was observed that the occupation in the first-excited electron state can result in a suppression to quantum confinement stark effect. moreover, at very low bias, a series of intrigue photoluminescence peaks appeared as a small quantity of excess electron was filled in the ground state of the quantum well, that cannot be explained by the theory of hand-to-hand transition in the framework of single electron picture. |
| WOS关键词 | EXCITONS |
| WOS研究方向 | Physics |
| WOS类目 | Physics, Multidisciplinary |
| 语种 | 英语 |
| WOS记录号 | WOS:000225783100052 |
| 出版者 | CHINESE PHYSICAL SOC |
| URI标识 | http://www.irgrid.ac.cn/handle/1471x/2429386 |
| 专题 | 半导体研究所 |
| 通讯作者 | Zhu, L |
| 作者单位 | 1.Sichuan Univ, Coll Phys Sci & Technol, Chengdu 610064, Peoples R China 2.Chinese Acad Sci, Inst Semicond, State Key Lab Superlattices & Microstruct, Beijing 100083, Peoples R China |
| 推荐引用方式 GB/T 7714 | Zhu, L,Zheng, HZ,Tan, PH,et al. Influence of level filling on optical properties of quantum well[J]. Acta physica sinica,2004,53(12):4334-4340. |
| APA | Zhu, L.,Zheng, HZ.,Tan, PH.,Zhou, X.,Ji, Y.,...&Zeng, YX.(2004).Influence of level filling on optical properties of quantum well.Acta physica sinica,53(12),4334-4340. |
| MLA | Zhu, L,et al."Influence of level filling on optical properties of quantum well".Acta physica sinica 53.12(2004):4334-4340. |
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来源：半导体研究所
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