Effects of v/iii ratio on ingaas and inp grown at low temperature by lp-mocvd
文献类型：期刊论文
| 作者 | Jiang, L; Lin, T; Wei, X; Wang, GH; Zhang, GZ; Zhang, HB; Ma, XY |
| 刊名 | Journal of crystal growth
 |
| 出版日期 | 2004-01-02 |
| 卷号 | 260期号:1-2页码:23-27 |
| 关键词 | Doping X-ray diffraction Low press Metalorganic vapor phase epitaxy Semiconducting iii-v materials Semiconducting indium phosphide |
| ISSN号 | 0022-0248 |
| DOI | 10.1016/j.jcrysgro.2003.08.013 |
| 通讯作者 | Jiang, l() |
| 英文摘要 | Effects of v/iii ratio on heavily si doped ingaas and inp were studied using low pressure metalorganic chemical vapor deposition (lp-mocvd) at a growth temperature of 550degreesc. in ingaas, as the v/iii ratio decreases from 256 to 64, the carrier concentration increases from 3.0 x 10(18) to 5.8 x 10(18) cm(-3), and the lattice mismatch of ingaas to inp was observed to vary from -5.70 x10(-4) to 1.49 x 10(-3). in inp, when the v/iii ratio decreases from 230 to 92, the same trend as that in si doped ingaas was observed that the carrier concentration increases from 9.2 x 10(18) to 1.3 x 10(19) cm(-3). the change of ash3 was found to have stronger effect on si incorporation in ingaas at lower growth temperature than at higher growth temperature. (c) 2003 elsevier b.v. all rights reserved. |
| WOS关键词 | VAPOR-PHASE EPITAXY ; SILICON INCORPORATION ; GALLIUM-ARSENIDE ; DISILANE ; GAINAS ; ARSINE |
| WOS研究方向 | Crystallography ; Materials Science ; Physics |
| WOS类目 | Crystallography ; Materials Science, Multidisciplinary ; Physics, Applied |
| 语种 | 英语 |
| WOS记录号 | WOS:000187730000005 |
| 出版者 | ELSEVIER SCIENCE BV |
| URI标识 | http://www.irgrid.ac.cn/handle/1471x/2429390 |
| 专题 | 半导体研究所 |
| 通讯作者 | Jiang, L |
| 作者单位 | Chinese Acad Sci, Inst Semicond, Natl Engn Res Ctr Optoelect Devices, Beijing 100083, Peoples R China |
| 推荐引用方式 GB/T 7714 | Jiang, L,Lin, T,Wei, X,et al. Effects of v/iii ratio on ingaas and inp grown at low temperature by lp-mocvd[J]. Journal of crystal growth,2004,260(1-2):23-27. |
| APA | Jiang, L.,Lin, T.,Wei, X.,Wang, GH.,Zhang, GZ.,...&Ma, XY.(2004).Effects of v/iii ratio on ingaas and inp grown at low temperature by lp-mocvd.Journal of crystal growth,260(1-2),23-27. |
| MLA | Jiang, L,et al."Effects of v/iii ratio on ingaas and inp grown at low temperature by lp-mocvd".Journal of crystal growth 260.1-2(2004):23-27. |
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来源：半导体研究所
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