Fabrication of gdsi2 film by low-energy ion-beam implantation
文献类型：期刊论文
| 作者 | Li, YL; Chen, NF; Zhou, JP; Song, SL; Yang, SY; Liu, ZK |
| 刊名 | Journal of crystal growth
 |
| 出版日期 | 2004-02-15 |
| 卷号 | 262期号:1-4页码:186-190 |
| 关键词 | Scanning electron microscopy X-ray diffraction X-ray photoelectron spectroscopy Ion-beam implantation Gadolinium disilicide |
| ISSN号 | 0022-0248 |
| DOI | 10.1016/j.jcrysgro.2003.10.004 |
| 通讯作者 | Li, yl(ylli@red.semi.ac.cn) |
| 英文摘要 | Single-phase gadolinium disilicide was fabricated by a low-energy ion-beam implantation technique. auger electron spectroscopy and x-ray photoelectron spectroscopy were used to determine the composition and chemical states of the film. the structure of the sample was analyzed by x-ray diffraction and the surface morphology was investigated by scan electron microscopy. based on the measurements, only orthorhombic gdsi2 phase was found in the sample and the surface morphology was pitting. after annealing at 350degreesc for 30 min at ar atmosphere, the full-width at half-maximum of gdsi2 became narrower. it indicates that the gdsi2 is crystallized better after annealing. (c) 2003 elsevier b.v. all rights reserved. |
| WOS关键词 | RARE-EARTH SILICIDES ; GADOLINIUM SILICIDE ; EPITAXIAL-GROWTH ; ERBIUM SILICIDE ; THIN-FILMS ; MORPHOLOGY ; SI |
| WOS研究方向 | Crystallography ; Materials Science ; Physics |
| WOS类目 | Crystallography ; Materials Science, Multidisciplinary ; Physics, Applied |
| 语种 | 英语 |
| WOS记录号 | WOS:000189098700027 |
| 出版者 | ELSEVIER SCIENCE BV |
| URI标识 | http://www.irgrid.ac.cn/handle/1471x/2429393 |
| 专题 | 半导体研究所 |
| 通讯作者 | Li, YL |
| 作者单位 | 1.Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, Beijing 100083, Peoples R China 2.Chinese Acad Sci, Natl Micrograv Lab, Beijing 100080, Peoples R China |
| 推荐引用方式 GB/T 7714 | Li, YL,Chen, NF,Zhou, JP,et al. Fabrication of gdsi2 film by low-energy ion-beam implantation[J]. Journal of crystal growth,2004,262(1-4):186-190. |
| APA | Li, YL,Chen, NF,Zhou, JP,Song, SL,Yang, SY,&Liu, ZK.(2004).Fabrication of gdsi2 film by low-energy ion-beam implantation.Journal of crystal growth,262(1-4),186-190. |
| MLA | Li, YL,et al."Fabrication of gdsi2 film by low-energy ion-beam implantation".Journal of crystal growth 262.1-4(2004):186-190. |
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来源：半导体研究所
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