中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
Investigations on v-defects in quaternary alingan epilayers

文献类型:期刊论文

作者Liu, JP; Wang, YT; Yang, H; Jiang, DS; Jahn, U; Ploog, KH
刊名Applied physics letters
出版日期2004-06-28
卷号84期号:26页码:5449-5451
ISSN号0003-6951
DOI10.1063/1.1767959
通讯作者Liu, jp(jpliu@red.semi.ac.cn)
英文摘要The characteristics of v-defects in quaternary alingan epilayers and their correlation with fluctuations of the in distribution are investigated. the geometric size of the v-defects is found to depend on the in composition of the alloy. the v-defects are nucleated within the alingan layer and associated with threading dislocations. line scan cathodoluminescence (cl) shows a redshift of the emission peak and an increase of the half width of the cl spectra as the electron beam approaches the apex of the v-defect. the total redshift decreases with decreasing in mole fraction in the alloy samples. although the strain reduction may partially contribute to the cl redshift, indium segregation is suggested to be responsible for the v-defect formation and has a main influence on the respective optical properties. (c) 2004 american institute of physics.
WOS关键词MULTIPLE-QUANTUM WELLS ; LIGHT-EMITTING-DIODES ; ENHANCED LUMINESCENCE ; PIT FORMATION ; LASER-DIODES ; EMISSION ; NM ; INXALYGA1-X-YN ; DISLOCATIONS ; SEGREGATION
WOS研究方向Physics
WOS类目Physics, Applied
语种英语
WOS记录号WOS:000222200600051
出版者AMER INST PHYSICS
URI标识http://www.irgrid.ac.cn/handle/1471x/2429396
专题半导体研究所
通讯作者Liu, JP
作者单位1.Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, Beijing 100083, Peoples R China
2.Chinese Acad Sci, Inst Semicond, State Key Lab Superlattices & Microstruct, Beijing 100083, Peoples R China
3.Paul Drude Inst Festkorperelekt, D-10117 Berlin, Germany
推荐引用方式
GB/T 7714
Liu, JP,Wang, YT,Yang, H,et al. Investigations on v-defects in quaternary alingan epilayers[J]. Applied physics letters,2004,84(26):5449-5451.
APA Liu, JP,Wang, YT,Yang, H,Jiang, DS,Jahn, U,&Ploog, KH.(2004).Investigations on v-defects in quaternary alingan epilayers.Applied physics letters,84(26),5449-5451.
MLA Liu, JP,et al."Investigations on v-defects in quaternary alingan epilayers".Applied physics letters 84.26(2004):5449-5451.

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来源:半导体研究所

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