Investigations on v-defects in quaternary alingan epilayers
文献类型：期刊论文
| 作者 | Liu, JP; Wang, YT; Yang, H; Jiang, DS; Jahn, U; Ploog, KH |
| 刊名 | Applied physics letters
 |
| 出版日期 | 2004-06-28 |
| 卷号 | 84期号:26页码:5449-5451 |
| ISSN号 | 0003-6951 |
| DOI | 10.1063/1.1767959 |
| 通讯作者 | Liu, jp(jpliu@red.semi.ac.cn) |
| 英文摘要 | The characteristics of v-defects in quaternary alingan epilayers and their correlation with fluctuations of the in distribution are investigated. the geometric size of the v-defects is found to depend on the in composition of the alloy. the v-defects are nucleated within the alingan layer and associated with threading dislocations. line scan cathodoluminescence (cl) shows a redshift of the emission peak and an increase of the half width of the cl spectra as the electron beam approaches the apex of the v-defect. the total redshift decreases with decreasing in mole fraction in the alloy samples. although the strain reduction may partially contribute to the cl redshift, indium segregation is suggested to be responsible for the v-defect formation and has a main influence on the respective optical properties. (c) 2004 american institute of physics. |
| WOS关键词 | MULTIPLE-QUANTUM WELLS ; LIGHT-EMITTING-DIODES ; ENHANCED LUMINESCENCE ; PIT FORMATION ; LASER-DIODES ; EMISSION ; NM ; INXALYGA1-X-YN ; DISLOCATIONS ; SEGREGATION |
| WOS研究方向 | Physics |
| WOS类目 | Physics, Applied |
| 语种 | 英语 |
| WOS记录号 | WOS:000222200600051 |
| 出版者 | AMER INST PHYSICS |
| URI标识 | http://www.irgrid.ac.cn/handle/1471x/2429396 |
| 专题 | 半导体研究所 |
| 通讯作者 | Liu, JP |
| 作者单位 | 1.Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, Beijing 100083, Peoples R China 2.Chinese Acad Sci, Inst Semicond, State Key Lab Superlattices & Microstruct, Beijing 100083, Peoples R China 3.Paul Drude Inst Festkorperelekt, D-10117 Berlin, Germany |
| 推荐引用方式 GB/T 7714 | Liu, JP,Wang, YT,Yang, H,et al. Investigations on v-defects in quaternary alingan epilayers[J]. Applied physics letters,2004,84(26):5449-5451. |
| APA | Liu, JP,Wang, YT,Yang, H,Jiang, DS,Jahn, U,&Ploog, KH.(2004).Investigations on v-defects in quaternary alingan epilayers.Applied physics letters,84(26),5449-5451. |
| MLA | Liu, JP,et al."Investigations on v-defects in quaternary alingan epilayers".Applied physics letters 84.26(2004):5449-5451. |
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来源：半导体研究所
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