The influence of aln buffer layer thickness on the properties of gan epilayer
文献类型：期刊论文
| 作者 | Zhang, JC; Zhao, DG; Wang, JF; Wang, YT; Chen, J; Liu, JP; Yang, H |
| 刊名 | Journal of crystal growth
 |
| 出版日期 | 2004-07-15 |
| 卷号 | 268期号:1-2页码:24-29 |
| 关键词 | Buffer layer Line defects X-ray diffraction Metalorganic chemical vapor deposition Gallium compounds Nitrides |
| ISSN号 | 0022-0248 |
| DOI | 10.1016/j.jcrysgro.2004.04.102 |
| 通讯作者 | Zhang, jc(jczhang@red.semi.ac.cn) |
| 英文摘要 | The influence of low-temperature aln buffer layer thickness on gan epilayer was investigated by triple-axis x-ray diffraction (xrd) and photoluminescence measurements. a method was proposed to measure the screw and edge dislocation densities by xrd. it was found that the buffer layer thickness was a key parameter to affect the quality of gan epilayer and an appropriate thickness resulted in the best structural and optical properties except the lateral grain size. after the thickness exceeding the appropriate value, the compressive stress in the epilayer decreased as the thickness increased, which led to the redshift of the near-band edge luminescence. the experimental results showed the buffer layer thickness had more influence on edge dislocation than screw type and the former was perhaps the main source of the yellow band. (c) 2004 elsevier b.v. all rights reserved. |
| WOS关键词 | MOLECULAR-BEAM EPITAXY ; LOW-TEMPERATURE GAN ; X-RAY-DIFFRACTION ; EDGE DISLOCATIONS ; OPTICAL-PROPERTIES ; GALLIUM NITRIDE ; IN-SITU ; GROWTH ; SAPPHIRE ; STRAIN |
| WOS研究方向 | Crystallography ; Materials Science ; Physics |
| WOS类目 | Crystallography ; Materials Science, Multidisciplinary ; Physics, Applied |
| 语种 | 英语 |
| WOS记录号 | WOS:000222714700005 |
| 出版者 | ELSEVIER SCIENCE BV |
| URI标识 | http://www.irgrid.ac.cn/handle/1471x/2429397 |
| 专题 | 半导体研究所 |
| 通讯作者 | Zhang, JC |
| 作者单位 | 1.Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, Beijing 100083, Peoples R China 2.Wuhan Univ, Dept Phys, Wuhan 430072, Peoples R China |
| 推荐引用方式 GB/T 7714 | Zhang, JC,Zhao, DG,Wang, JF,et al. The influence of aln buffer layer thickness on the properties of gan epilayer[J]. Journal of crystal growth,2004,268(1-2):24-29. |
| APA | Zhang, JC.,Zhao, DG.,Wang, JF.,Wang, YT.,Chen, J.,...&Yang, H.(2004).The influence of aln buffer layer thickness on the properties of gan epilayer.Journal of crystal growth,268(1-2),24-29. |
| MLA | Zhang, JC,et al."The influence of aln buffer layer thickness on the properties of gan epilayer".Journal of crystal growth 268.1-2(2004):24-29. |
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来源：半导体研究所
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