Upconversion emission of a er3+-doped glass microsphere under 633 nm excitation
文献类型：期刊论文
| 作者 | Wang, JY; Ji, GR; Jin, P; Zhao, LJ; Zhang, CZ |
| 刊名 | Microelectronics journal
 |
| 出版日期 | 2004-04-01 |
| 卷号 | 35期号:4页码:353-355 |
| 关键词 | Upconversion Doped-er3+ glass microsphere Morphology-dependent resonances |
| ISSN号 | 0026-2692 |
| DOI | 10.1016/s0026-2692(03)00244-1 |
| 通讯作者 | Wang, jy(wangjiyou@bjut.edu.cn) |
| 英文摘要 | In this work, the tbs glass microspheres doped with er3+ for morphology-dependent resonances of upconversion emission were designed. the glass sample components are 25tio(2)-27baco(3)-8ba(no3)(2)-6zno(2)-9caco(3)-5h(3)bo(3)-10sio(2)-7water glass-3er(2)o(3) (wt%), and the emission spectra of tbs glass and a tbs glass microsphere (about 48 mum in diameter) were measured under 633 nm excitation and discussed. the strong morphology-dependent resonances of upconversion luminescences in the microsphere were observed. the observed resonances could be assigned by using the well-known lorenz-mie formalism. (c) 2003 elsevier ltd. all rights reserved. |
| WOS研究方向 | Engineering ; Science & Technology - Other Topics |
| WOS类目 | Engineering, Electrical & Electronic ; Nanoscience & Nanotechnology |
| 语种 | 英语 |
| WOS记录号 | WOS:000220391200008 |
| 出版者 | ELSEVIER SCI LTD |
| URI标识 | http://www.irgrid.ac.cn/handle/1471x/2429398 |
| 专题 | 半导体研究所 |
| 通讯作者 | Wang, JY |
| 作者单位 | 1.Bewing Univ Technol, Coll Appl Sci, Beijing 100022, Peoples R China 2.Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, Beijing, Peoples R China 3.Nankai Univ, Coll Phys Sci, Phtoton Ctr, Tianjin, Peoples R China |
| 推荐引用方式 GB/T 7714 | Wang, JY,Ji, GR,Jin, P,et al. Upconversion emission of a er3+-doped glass microsphere under 633 nm excitation[J]. Microelectronics journal,2004,35(4):353-355. |
| APA | Wang, JY,Ji, GR,Jin, P,Zhao, LJ,&Zhang, CZ.(2004).Upconversion emission of a er3+-doped glass microsphere under 633 nm excitation.Microelectronics journal,35(4),353-355. |
| MLA | Wang, JY,et al."Upconversion emission of a er3+-doped glass microsphere under 633 nm excitation".Microelectronics journal 35.4(2004):353-355. |
入库方式： iSwitch采集
来源：半导体研究所
浏览0
下载0
收藏0
其他版本
除非特别说明，本系统中所有内容都受版权保护，并保留所有权利。