Growth of crack-free algan film on thin aln interlayer by mocvd
文献类型：期刊论文
| 作者 | Jin, RQ; Liu, JP; Zhang, JC; Yang, H |
| 刊名 | Journal of crystal growth
 |
| 出版日期 | 2004-07-15 |
| 卷号 | 268期号:1-2页码:35-40 |
| 关键词 | Crystal morphology X-ray diffraction Metalorganic chemical vapor deposition Aluminium gallium nitride |
| ISSN号 | 0022-0248 |
| DOI | 10.1016/j.crysgro.2004.04.109 |
| 通讯作者 | Jin, rq(rqjin@red.semi.ac.cn) |
| 英文摘要 | We have studied the effect of low-temperature-deposited (lt) and high-temperature-deposited (fit) aln interlayer with various thickness on algan film grown on gan using c-plane sapphire as substrate. all the al0.25ga0.75n films thicker than 1 mum with lt-aln interlayer or with ht-aln interlayer were free of cracks, however, their surfaces were different: the al0.25ga0.75n films with lt-aln interlayer showed smooth surface, while those with ht-aln interlayer exhibit rough surface morphology. the results of x-ray double crystal diffraction and rutherford backscattering showed that all of the algan films were under compressive strain in the parallel direction. the compressive strain resulted from the effect of interlayer-induced stress relieving and the thermal mismatch for the samples with lt-aln interlayer, and it was due to the thermal mismatch between algan and the underlying layers for those with ht-aln interlayer. (c) 2004 elsevier b.v. all rights reserved. |
| WOS关键词 | STRESS |
| WOS研究方向 | Crystallography ; Materials Science ; Physics |
| WOS类目 | Crystallography ; Materials Science, Multidisciplinary ; Physics, Applied |
| 语种 | 英语 |
| WOS记录号 | WOS:000222714700007 |
| 出版者 | ELSEVIER SCIENCE BV |
| URI标识 | http://www.irgrid.ac.cn/handle/1471x/2429414 |
| 专题 | 半导体研究所 |
| 通讯作者 | Jin, RQ |
| 作者单位 | Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, Beijing 100083, Peoples R China |
| 推荐引用方式 GB/T 7714 | Jin, RQ,Liu, JP,Zhang, JC,et al. Growth of crack-free algan film on thin aln interlayer by mocvd[J]. Journal of crystal growth,2004,268(1-2):35-40. |
| APA | Jin, RQ,Liu, JP,Zhang, JC,&Yang, H.(2004).Growth of crack-free algan film on thin aln interlayer by mocvd.Journal of crystal growth,268(1-2),35-40. |
| MLA | Jin, RQ,et al."Growth of crack-free algan film on thin aln interlayer by mocvd".Journal of crystal growth 268.1-2(2004):35-40. |
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来源：半导体研究所
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