Photoluminescence study of ingan/gan quantum dots grown on passivated gan surface
文献类型：期刊论文
| 作者 | Huang, JS; Chen, Z; Luo, XD; Xu, ZY; Ge, WK |
| 刊名 | Journal of crystal growth
 |
| 出版日期 | 2004-01-02 |
| 卷号 | 260期号:1-2页码:13-17 |
| 关键词 | Atomic force microscopy Low dimensional structures Metalorganic chemical vapor deposition Semiconducting iii-v materials |
| ISSN号 | 0022-0248 |
| DOI | 10.1016/j.jcrysgro.2003.08.008 |
| 通讯作者 | Huang, js() |
| 英文摘要 | We have measured photoluminescence (pl) and time-resolve photoluminescence (trpl) from ingan/gan quantum dots (qds) grown on passivated gan surfaces by metalorganic chemical vapor deposition (mocvd). strong pl emission was observed from the qds structure even at room temperature. by comparing the pl and trpl dependence on temperature, a significant difference between the qd and wetting layer emissions was revealed. the qd emission is characterized by a strong exciton localization effect, which leads to a larger thermal activation energy, a nearly constant radiative lifetime independent of temperature and an unusual temperature behavior of the pl peak energy. (c) 2003 elsevier b.v. all rights reserved. |
| WOS关键词 | CHEMICAL-VAPOR-DEPOSITION ; ROOM-TEMPERATURE ; SELECTIVE GROWTH ; LASER |
| WOS研究方向 | Crystallography ; Materials Science ; Physics |
| WOS类目 | Crystallography ; Materials Science, Multidisciplinary ; Physics, Applied |
| 语种 | 英语 |
| WOS记录号 | WOS:000187730000003 |
| 出版者 | ELSEVIER SCIENCE BV |
| URI标识 | http://www.irgrid.ac.cn/handle/1471x/2429417 |
| 专题 | 半导体研究所 |
| 通讯作者 | Huang, JS |
| 作者单位 | 1.Chinese Acad Sci, Inst Semicond, Beijing 100083, Peoples R China 2.Hong Kong Univ Sci & Technol, Dept Phys, Hong Kong, Hong Kong, Peoples R China |
| 推荐引用方式 GB/T 7714 | Huang, JS,Chen, Z,Luo, XD,et al. Photoluminescence study of ingan/gan quantum dots grown on passivated gan surface[J]. Journal of crystal growth,2004,260(1-2):13-17. |
| APA | Huang, JS,Chen, Z,Luo, XD,Xu, ZY,&Ge, WK.(2004).Photoluminescence study of ingan/gan quantum dots grown on passivated gan surface.Journal of crystal growth,260(1-2),13-17. |
| MLA | Huang, JS,et al."Photoluminescence study of ingan/gan quantum dots grown on passivated gan surface".Journal of crystal growth 260.1-2(2004):13-17. |
入库方式： iSwitch采集
来源：半导体研究所
浏览0
下载0
收藏0
其他版本
除非特别说明，本系统中所有内容都受版权保护，并保留所有权利。