中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
Novel room temperature photoluminescence of ge/si islands in multilayer structure grown on silicon-on-insulator substrate

文献类型:期刊论文

作者Li, CB; Cheng, BW; Mao, RW; Zuo, YH; Shi, WH; Huang, CJ; Luo, LP; Yu, JZ; Wang, QM
刊名Thin solid films
出版日期2004-11-22
卷号467期号:1-2页码:197-200
关键词Ge islands Photoluminescence Cavity Soi
ISSN号0040-6090
DOI10.1016/j.tsf.2004.04.013
通讯作者Li, cb(cbli@red.semi.ac.cn)
英文摘要Novel room temperature photoluminescence (pl) of the ge/si islands in multilayer structure grown on silicon-on-insulator substrates is investigated. the cavity formed by the mirrors at the surface and the buried sio2 interface has a strong effect on the pl emission. the peak position is consistent with the theoretical calculation and independent of the exciting power, which is the evidence of cavity effect on the room temperature photoluminescence. (c) 2004 elsevier b.v. all rights reserved.
WOS关键词CHEMICAL-VAPOR-DEPOSITION ; GE QUANTUM DOTS ; HUT CLUSTERS ; SI(001) ; HETEROSTRUCTURES
WOS研究方向Materials Science ; Physics
WOS类目Materials Science, Multidisciplinary ; Materials Science, Coatings & Films ; Physics, Applied ; Physics, Condensed Matter
语种英语
WOS记录号WOS:000224185100033
出版者ELSEVIER SCIENCE SA
URI标识http://www.irgrid.ac.cn/handle/1471x/2429421
专题半导体研究所
通讯作者Li, CB
作者单位1.Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, Beijing 100083, Peoples R China
2.Univ Toronto, Dept Mat Sci & Engn, Toronto, ON M5S 3E4, Canada
推荐引用方式
GB/T 7714
Li, CB,Cheng, BW,Mao, RW,et al. Novel room temperature photoluminescence of ge/si islands in multilayer structure grown on silicon-on-insulator substrate[J]. Thin solid films,2004,467(1-2):197-200.
APA Li, CB.,Cheng, BW.,Mao, RW.,Zuo, YH.,Shi, WH.,...&Wang, QM.(2004).Novel room temperature photoluminescence of ge/si islands in multilayer structure grown on silicon-on-insulator substrate.Thin solid films,467(1-2),197-200.
MLA Li, CB,et al."Novel room temperature photoluminescence of ge/si islands in multilayer structure grown on silicon-on-insulator substrate".Thin solid films 467.1-2(2004):197-200.

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来源:半导体研究所

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