Novel room temperature photoluminescence of ge/si islands in multilayer structure grown on silicon-on-insulator substrate
文献类型:期刊论文
作者 | Li, CB; Cheng, BW; Mao, RW; Zuo, YH; Shi, WH; Huang, CJ; Luo, LP; Yu, JZ; Wang, QM |
刊名 | Thin solid films
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出版日期 | 2004-11-22 |
卷号 | 467期号:1-2页码:197-200 |
关键词 | Ge islands Photoluminescence Cavity Soi |
ISSN号 | 0040-6090 |
DOI | 10.1016/j.tsf.2004.04.013 |
通讯作者 | Li, cb(cbli@red.semi.ac.cn) |
英文摘要 | Novel room temperature photoluminescence (pl) of the ge/si islands in multilayer structure grown on silicon-on-insulator substrates is investigated. the cavity formed by the mirrors at the surface and the buried sio2 interface has a strong effect on the pl emission. the peak position is consistent with the theoretical calculation and independent of the exciting power, which is the evidence of cavity effect on the room temperature photoluminescence. (c) 2004 elsevier b.v. all rights reserved. |
WOS关键词 | CHEMICAL-VAPOR-DEPOSITION ; GE QUANTUM DOTS ; HUT CLUSTERS ; SI(001) ; HETEROSTRUCTURES |
WOS研究方向 | Materials Science ; Physics |
WOS类目 | Materials Science, Multidisciplinary ; Materials Science, Coatings & Films ; Physics, Applied ; Physics, Condensed Matter |
语种 | 英语 |
WOS记录号 | WOS:000224185100033 |
出版者 | ELSEVIER SCIENCE SA |
URI标识 | http://www.irgrid.ac.cn/handle/1471x/2429421 |
专题 | 半导体研究所 |
通讯作者 | Li, CB |
作者单位 | 1.Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, Beijing 100083, Peoples R China 2.Univ Toronto, Dept Mat Sci & Engn, Toronto, ON M5S 3E4, Canada |
推荐引用方式 GB/T 7714 | Li, CB,Cheng, BW,Mao, RW,et al. Novel room temperature photoluminescence of ge/si islands in multilayer structure grown on silicon-on-insulator substrate[J]. Thin solid films,2004,467(1-2):197-200. |
APA | Li, CB.,Cheng, BW.,Mao, RW.,Zuo, YH.,Shi, WH.,...&Wang, QM.(2004).Novel room temperature photoluminescence of ge/si islands in multilayer structure grown on silicon-on-insulator substrate.Thin solid films,467(1-2),197-200. |
MLA | Li, CB,et al."Novel room temperature photoluminescence of ge/si islands in multilayer structure grown on silicon-on-insulator substrate".Thin solid films 467.1-2(2004):197-200. |
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来源:半导体研究所
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