Properties of high k gate dielectric gadolinium oxide deposited on si(100) by dual ion beam deposition (dibd)
文献类型：期刊论文
| 作者 | Zhou, JP; Chai, CL; Yang, SY; Liu, ZK; Song, SL; Li, YL; Chen, NF |
| 刊名 | Journal of crystal growth
 |
| 出版日期 | 2004-09-15 |
| 卷号 | 270期号:1-2页码:21-29 |
| 关键词 | Auger electron spectroscopy Atomic force microscopy Crystal structures X-ray photoelectron spectroscopy Ion-beam deposition Oxides |
| ISSN号 | 0022-0248 |
| DOI | 10.1016/j.jcrysgro.2004.05.114 |
| 通讯作者 | Zhou, jp(zhoujp@mail.tsinghua.edu.cn) |
| 英文摘要 | Gadolinium oxide thin films have been prepared on silicon (100) substrates with a low-energy dual ion-beam epitaxial technique. substrate temperature was an important factor to affect the crystal structures and textures in an ion energy range of 100-500 ev. the films had a monoclinic gd2o3 structure with preferred orientation ((4) over bar 02) at low substrate temperatures. when the substrate temperature was increased, the orientation turned to (202), and finally, the cubic structure appeared at the substrate temperature of 700 degreesc, which disagreed with the previous report because of the ion energy. the aes studies found that gadolinium oxide shared gd2o3 structures, although there were a lot of oxygen deficiencies in the films, and the xps results confirmed this. afm was also used to investigate the surface images of the samples. finally, the electrical properties were presented. (c) 2004 elsevier b.v. all rights reserved. |
| WOS关键词 | 4D PHOTOEMISSION ; HIGH-RESOLUTION ; THIN-FILMS ; SILICON ; SYSTEM ; GD2O3 ; Y2O3 |
| WOS研究方向 | Crystallography ; Materials Science ; Physics |
| WOS类目 | Crystallography ; Materials Science, Multidisciplinary ; Physics, Applied |
| 语种 | 英语 |
| WOS记录号 | WOS:000224134900004 |
| 出版者 | ELSEVIER SCIENCE BV |
| URI标识 | http://www.irgrid.ac.cn/handle/1471x/2429426 |
| 专题 | 半导体研究所 |
| 通讯作者 | Zhou, JP |
| 作者单位 | 1.Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, Beijing 100083, Peoples R China 2.Chinese Acad Sci, Natl Micrograv Lab, Inst Mech, Beijing 100080, Peoples R China |
| 推荐引用方式 GB/T 7714 | Zhou, JP,Chai, CL,Yang, SY,et al. Properties of high k gate dielectric gadolinium oxide deposited on si(100) by dual ion beam deposition (dibd)[J]. Journal of crystal growth,2004,270(1-2):21-29. |
| APA | Zhou, JP.,Chai, CL.,Yang, SY.,Liu, ZK.,Song, SL.,...&Chen, NF.(2004).Properties of high k gate dielectric gadolinium oxide deposited on si(100) by dual ion beam deposition (dibd).Journal of crystal growth,270(1-2),21-29. |
| MLA | Zhou, JP,et al."Properties of high k gate dielectric gadolinium oxide deposited on si(100) by dual ion beam deposition (dibd)".Journal of crystal growth 270.1-2(2004):21-29. |
入库方式： iSwitch采集
来源：半导体研究所
浏览0
下载0
收藏0
其他版本
除非特别说明，本系统中所有内容都受版权保护，并保留所有权利。