Movpe growth of grade-strained bulk ingaas/inp for broad-band optoelectronic device applications
文献类型：期刊论文
| 作者 | Wang, SR; Wang, W; Zhu, HL; Zhao, LJ; Zhang, RY; Zhou, F; Shu, HY; Wang, RF |
| 刊名 | Journal of crystal growth
 |
| 出版日期 | 2004-01-09 |
| 卷号 | 260期号:3-4页码:464-468 |
| 关键词 | Graded-strain High resolution x-ray diffraction Metalorganic vapor phase epitaxy Ingaas Broadband semiconductor optoelectronic device |
| ISSN号 | 0022-0248 |
| DOI | 10.1016/j.jcrysgro.2003.09.003 |
| 通讯作者 | Wang, sr() |
| 英文摘要 | In this paper we present a novel growth of grade-strained bulk ingaas/inp by linearly changing group-iii tmga source flow during low-pressure metalorganic vapor-phase epitaxy (lp-movpe). the high-resolution x-ray diffraction (hrxrd) measurements showed that much different strain was simultaneously introduced into the fabricated bulk ingaas/inp by utilizing this novel growth method. we experimentally demonstrated the utility and simplicity of the growth method by fabricating common laser diodes. as a first step, under the injection current of 100 ma, a more flat gain curve which has a spectral full-width at half-maximum (fwhm) of about 120 nm was achieved by using the presented growth technique. our experimental results show that the simple and new growth method is very suitable for fabricating broad-band semiconductor optoelectronic devices. (c) 2003 elsevier b.v. all rights reserved. |
| WOS关键词 | WIDE SPECTRUM ; QUANTUM-WELLS ; SUPERLUMINESCENT DIODE ; MU-M ; LASERS |
| WOS研究方向 | Crystallography ; Materials Science ; Physics |
| WOS类目 | Crystallography ; Materials Science, Multidisciplinary ; Physics, Applied |
| 语种 | 英语 |
| WOS记录号 | WOS:000187781300030 |
| 出版者 | ELSEVIER SCIENCE BV |
| URI标识 | http://www.irgrid.ac.cn/handle/1471x/2429434 |
| 专题 | 半导体研究所 |
| 通讯作者 | Wang, SR |
| 作者单位 | 1.Chinese Acad Sci, Inst Semicond, Natl Res Ctr Optoelect Technol, Beijing 100083, Peoples R China 2.Yunnan Normal Univ, Inst Solar Energy, Kunming 650092, Peoples R China |
| 推荐引用方式 GB/T 7714 | Wang, SR,Wang, W,Zhu, HL,et al. Movpe growth of grade-strained bulk ingaas/inp for broad-band optoelectronic device applications[J]. Journal of crystal growth,2004,260(3-4):464-468. |
| APA | Wang, SR.,Wang, W.,Zhu, HL.,Zhao, LJ.,Zhang, RY.,...&Wang, RF.(2004).Movpe growth of grade-strained bulk ingaas/inp for broad-band optoelectronic device applications.Journal of crystal growth,260(3-4),464-468. |
| MLA | Wang, SR,et al."Movpe growth of grade-strained bulk ingaas/inp for broad-band optoelectronic device applications".Journal of crystal growth 260.3-4(2004):464-468. |
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来源：半导体研究所
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